Distributed micromotor system phase shifter chip scale micro-packing component
A technology of micro-electromechanical systems and phase shifters, which is applied in piezoelectric/electrostrictive/magnetostrictive devices, electrical components, microstructure technology, etc., can solve the problem of increasing device volume and loss, complex preparation process, gas pollution, etc. problems, to achieve the effect of long life, good process compatibility and low cost
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specific Embodiment approach 1
[0006] Specific implementation mode one: (see Figure 1 ~ Figure 2 ) This embodiment consists of a substrate 1, a first coplanar waveguide ground wire 2, an insulating dielectric layer 3, a second coplanar waveguide ground wire 4, a microstructure component 5 of a phase shifter, a first metal interconnection wire 6, a second Second metal interconnection 7, third metal interconnection 8, sealed insulating dielectric package 9, fourth metal interconnection 10, fifth metal interconnection 11, sixth metal interconnection 12, coplanar waveguide signal The first metal interconnection 6, the second metal interconnection 7 and the third metal interconnection 8 are equidistantly arranged on the right side of the substrate 1, and the fourth metal interconnection 10. The fifth metal interconnection 11 and the sixth metal interconnection 12 are equidistantly arranged on the left side of the substrate 1, the first coplanar waveguide ground 2, the second coplanar waveguide ground 4 and the ...
specific Embodiment approach 2
[0007] Specific implementation mode two: (see Figure 1 ~ Figure 2 ) The substrate 1 of the present embodiment is made of high-resistance silicon material (with a silicon dioxide layer), the thickness H of the substrate 1 is 500 μm, and the dielectric constant ε of the substrate 1 is r is 11.9, the first metal interconnection 6, the second metal interconnection 7, the third metal interconnection 8, the fourth metal interconnection 10, the fifth metal interconnection 11 and the sixth metal interconnection 12 The radius of each is 10 μm, and the distance h between the top and bottom of the sealed insulating dielectric package body 9 and the microstructure component 5 of the phase shifter is 50 μm. Through the first metal interconnection line 6, the second metal interconnection line 7, the third metal interconnection line 8, the fourth metal interconnection line 10, the fifth metal interconnection line 11 and the first metal interconnection line vertically passing through the sub...
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