Thin film transistor array panel and method of manufacturing the same
A technology of thin film transistors and array panels, applied in transistors, optics, instruments, etc., can solve problems such as corrosion of data lines or gate lines, pollution, etc.
Active Publication Date: 2010-02-17
SAMSUNG DISPLAY CO LTD
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Problems solved by technology
Strong etchant may smear through the pinholes in the insulating layer and corrode the data or gate lines
[0006] IZO doesn't have this problem, but it is prone to being scratched by test probes and sticking to it
Method used
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[0085] With reference to the drawings in which preferred embodiments of the present invention are shown, the preferred embodiments of the present invention are described more fully hereinafter. However, the present invention can be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, for those skilled in the art, these embodiments are provided so that this disclosure is comprehensive and complete, and fully conveys the scope of the present invention.
[0086] For clarity, the thickness of layers, films, and regions are exaggerated in the drawings. All similar reference numerals indicate similar elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present.
[0087] Now referring to the accompanying drawings, the TFT array panel and the manufa...
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The present invention relates to a thin film transistor array panel, a liquid crystal display, and a manufacturing method of the same. A TFT array for a LCD or an EL display is used as a circuit boardfor driving the respective pixels in an independent manner. The present invention provides pixel electrodes and contact assistants, which connect expansions of gate lines and data lines to an external circuit, having a structure of double layers including IZO layer and ITO layer. The ITO layer is disposed on the IZO layer. In the present invention, the pixel electrodes are formed to have double layers of IZO layer and ITO layer to avoid wires from getting damage by the ITO etchant and to prevent prove pins from having accumulation of foreign body during the gross test. In the present invention, the contact assistants may only be formed to have double layers of IZO layer and ITO layer to prevent prove pins from having accumulation of foreign body during the gross test. Since the consumption of ITO is reduced, manufacturing cost decreases.
Description
Technical field [0001] The invention relates to a wiring structure, a thin film transistor array panel having the wiring structure and a manufacturing method thereof. Background technique [0002] Generally, a thin film transistor ("TFT") array panel used in a liquid crystal display ("LCD") or electroluminescence ("EL") display is used as a circuit board that drives each pixel in an independent manner. The TFT array panel includes scanning signal lines or gate lines that transmit scan signals, image signal lines or data lines that transmit image signals, TFTs connected to the gate lines and data lines, pixel electrodes connected to the TFTs, and gate lines that cover the gate lines. Insulating gate insulating layer, passivation layer covering TFT and data line to insulate. The TFT includes a gate electrode as a part of the gate line, a semiconductor forming a channel, a source electrode and a drain electrode as a part of the data line, a gate insulating layer, and a passivation ...
Claims
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IPC IPC(8): G02F1/136H01L29/786
CPCG02F1/136213G02F1/136227G02F1/136286
Inventor 金湘甲李帝珉赵宽英郑钟台宋仁虎崔熙焕姜圣哲妻镐民崔凡洛崔埈厚
Owner SAMSUNG DISPLAY CO LTD