Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method

A technology for large glass substrates and photomasks, which is applied to the original components for photomechanical processing, photomechanical equipment, chemical instruments and methods, etc., and can solve the problems of increased weight of large glass substrates

Active Publication Date: 2007-07-25
SHIN ETSU CHEM IND CO LTD
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the weight of the large glass substrate also increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method
  • Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0123] Use abrasive GC#600 (Fujimi Abrasive Co., Ltd.) and use a planetary motion double-sided grinder to grind to a size of 330mm×450mm (diagonal length is about 558mm) and a thickness of 5.3mm Synthetic quartz glass substrate material to prepare initial substrate or substrate material. The substrate material has a frontal flatness of 22 μm measured in a vertical posture (surface flatness / diagonal length=39×10 -6 ), a back flatness of 25 μm, and a parallelism of 3 μm, and the shape has a central portion higher than the least square plane.

[0124] Then, using the material strength and the support position of the substrate when held vertically, the deflection due to its own weight when held horizontally by the substrate material having a thickness of 5 mm after grinding was calculated. The deformation of the substrate and the stage are checked in advance from the amount of deformation of the virtual glass substrate material actually supported at an appropriate position in the...

Embodiment 2

[0134] The process of Example 1 was repeated except that a substrate material having a size of 520 mm×800 mm (diagonal length about 954 mm) and a thickness of 10.4 mm was used.

[0135] The proximity gap is measured substantially over the entire area using a laser displacement meter. The measured value near the gap includes a maximum value of 58 μm and a minimum value of 47 μm over the entire area except the peripheral region extending 4 cm from each side, and the gap error is 11 μm.

Embodiment 3

[0137] The process of Example 1 was repeated except that a substrate material having a size of 850 mm×1200 mm (diagonal length about 1471 mm) and a thickness of 10.4 mm was used.

[0138] The proximity gap is measured substantially over the entire area using a laser displacement meter. The measured value near the gap includes a maximum value of 59 μm and a minimum value of 47 μm over the entire area except the peripheral region extending 4 cm from each side, and the gap error is 12 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

A large-size glass substrate, from which a photomask substrate is formed, is prepared by processing a large-size glass substrate stock by (1) a flattening removal quantity based on height data of the substrate stock in the vertical attitude plus a deformation-corrective removal quantity. The deformation-corrective removal quantity is calculated from (2) a deflection of the substrate stock by its own weight in the horizontal attitude, (3) a deformation of the photomask substrate caused by chucking in an exposure apparatus, and (4) an accuracy distortion of a platen for supporting a mother glass.

Description

technical field [0001] The present invention relates to: a large glass substrate suitable for forming an array side and a color filter side photomask substrate in a TFT liquid crystal panel; a method of manufacturing the substrate; a computer readable record having recorded therein a program for performing the method medium; and a method for exposure using a mother glass serving as an array side and a color filter side substrate in a TFT liquid crystal panel. Background technique [0002] In general, a TFT liquid crystal panel is constructed by filling liquid crystals between an array-side substrate in which TFT devices are installed and a color filter substrate. They are based on an active matrix addressing scheme in which TFTs apply controlled voltages to control the orientation of the liquid crystals. [0003] In the manufacture of the array-side substrate, a multilayer pattern is formed on a mother glass, such as non-alkaline glass, by repeatedly exposing a master plate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C19/00H01L21/027G03F1/14G03F1/60G03F1/68
CPCG03F1/14G02F2001/133302C03C19/00G03F7/70791G03F1/60G02F1/133302C07F7/18G02F1/1333
Inventor 上田修平柴野由纪夫渡部厚草开大介
Owner SHIN ETSU CHEM IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products