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Method for manufacturing an electric device with a layer of conductive material contacted by nanowire

A technology of conductive material layers and electronic devices, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc.

Inactive Publication Date: 2011-09-28
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Alternatively, or in addition, it may occur that some resistive devices switch to a particular resistance value while others switch to another resistance value when the same electrical switching signal is provided

Method used

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  • Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
  • Method for manufacturing an electric device with a layer of conductive material contacted by nanowire
  • Method for manufacturing an electric device with a layer of conductive material contacted by nanowire

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Embodiment Construction

[0065] Figure 1~5 Various stages of fabrication are shown for an embodiment of an electronic device 100 having a base body 102 comprising a substrate 101 which may comprise, for example, a monocrystalline p-doped silicon semiconductor wafer. The base also includes an array of selection devices 171 . exist Figure 1~5 In the illustrated embodiment, electronic device 100 has a 3x3 array, but the invention is not limited to arrays of this size, nor to arrays of this shape. The base body 102 also includes a grid of select lines 120 , 121 , so that each memory cell is individually accessible via a respective select line 120 , 121 connected to a respective select device 171 .

[0066] exist Figure 1~5 In the illustrated embodiment, the selection device 171 comprises a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and more specifically, an NMOS transistor. The MOSFET has an n-doped source region 172 , an n-doped drain region 173 and a gate region 174 . Source reg...

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Abstract

The electric device (100) according to the invention comprises a layer (107) of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device (100) further comprises a set of nanowires (NW) electrically connecting a first terminal (172) of the electric device and the layer (107) ofmemory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer (107) of memory material to a second terminal (272) of the electric device. Each nanowire (NW) electrically contacts the layer (107) of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device (100) according to the invention.

Description

technical field [0001] The present invention relates to a method of manufacturing an electronic device comprising a layer of conductive material and a set of nanowires electrically connected to the layer of conductive material for conducting current to the layer of conductive material through the nanowires. [0002] The invention also relates to an electronic device obtained by this method. Background technique [0003] The article "Electrical switching phenomenon in a phasechange material in contact with metallic nanowires" by H.Tanaka et al., Japanese Journal of Applied Physics, vol.14, p.L1443-L1445, 2002 discloses an electronic device in which Ge 2 Sb 2 Te 5 The phase-change storage layer is electrically contacted by metal nanowires Rh, the Ge 2 Sb 2 Te 5 is a conductive material whose resistivity is switchable between a first value and a second value. The nanowires are embedded in a mesoporous polycarbonate film that is 6 μm thick and 25 mm in diameter disc-shaped...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L45/00
CPCH01L27/2481H01L45/1273H01L45/06H01L27/2472H01L45/1233H01L45/148H01L27/2436H01L21/76879H01L21/28525B82Y10/00H01L45/144H01L27/2409G11C13/0004G11C13/025H01L45/16G11C2213/81H10B63/20H10B63/30H10B63/82H10B63/84H10N70/231H10N70/826H10N70/8418H10N70/8828H10N70/884H10N70/011H01L21/768B82Y40/00H10N70/00
Inventor 罗伯茨·T·F·范沙吉克普拉哈特·阿佳维埃里克·P·A·M·贝克斯马特吉·H·R·兰赫斯特米哈依尔·J·范杜里恩亚伯拉罕·R·贝尔克南德路易斯·F·费尼尔皮埃尔·H·沃尔里
Owner NXP BV
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