Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same

Abstract

By locally modifying the intrinsic stress of a dielectric layer laterally enclosing gate electrode structures of a transistor configuration formed in accordance with in-laid gate techniques, the charge carrier mobility of different transistor elements may individually be adjusted. In particular, in in-laid gate structure transistor architecture, NMOS transistors and PMOS transistors may receive a tensile and a compressive stress, respectively.

Description

technical field [0001] The present invention relates generally to the formation of integrated circuits, and more particularly to the formation of semiconductor regions with increased charge carrier mobility by creating strain in the semiconductor regions, such as the channel regions of field effect transistors. Background technique [0002] The manufacture of integrated circuits requires the formation of a large number of circuit components on a given die area according to a specified circuit layout. To this end, crystalline semiconductor regions with little or no added dopant material are defined at designated substrate locations to function as "active" regions, ie, at least temporarily, as conductive regions. At present, there are many kinds of process technologies generally used. Among them, for complex circuits, such as microprocessors, memory chips, etc., due to the superior characteristics of operating speed and / or power consumption and / or cost-effectiveness, Metal Oxi...

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Problems solved by technology

Therefore, the production complexity obviously increases, thereby increasing the production cost and possibly reducing the production output rate

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