Process for producing polycrystalline silicon bar

A manufacturing method, polysilicon technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, silicon, etc., can solve the problems of reduced mechanical strength, reduced life characteristics, increased power costs, etc., to promote the promotion of crystal lattice arrangement, The effect of accelerating the crystal growth rate and improving the life characteristics
CN101061065AInactive Publication Date: 2007-10-24COSMOSS ENERGY JAPAN CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
COSMOSS ENERGY JAPAN CO LTD
Publication Date
2007-10-24
Estimated Expiration
Not applicable · inactive patent

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Abstract

A process in which a polycrystalline silicon ingot improved in life time characteristics, which are correlated with the conversion efficiency of solar wafers, is inexpensively produced by the ordinary-pressure hydrogen-atmosphere melt method. In the process, the generation of oxygen and impurities in the silicon melt is inhibited and light-element impurities are removed through reaction or crystallization. Fine crystal grains can be grown at a high rate, and a high-purity polycrystalline silicon ingot having a crystal structure reduced in crystal defect can be grown. A silicon raw material is melted in an atmosphere of 100% hydrogen at ordinary pressure or an elevated pressure to prepare a silicon melt and simultaneously dissolve hydrogen in the silicon melt. The silicon melt containing hydrogen dissolved therein is solidified. Thereafter, the solid is held at a high temperature around the solidification temperature to grow silicon crystal grains in the solid phase and thereby obtain a polycrystalline silicon ingot.
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Description

technical field

[0001] The invention relates to a method for manufacturing polycrystalline silicon rods used in solar cells and the like. Background technique

[0002] As a conventional method for producing polycrystalline silicon ingots for solar cells, a method of melting / solidifying a silicon raw material in an argon atmosphere under reduced pressure is generally known, as in the single crystal pulling method. A melting furnace used in this conventional method will be described with reference to FIG. 2 . FIG. 2 is a schematic explanatory diagram showing an example of a conventional melting furnace. In FIG. 2 , 10 a is a melting furnace, and has a sagger 12 , a heating device 14 for heating the sagger 12 , a support device 16 for placing the sagger 12 to rotate and ascend, a heat insulating material 18 , and a vacuum chamber 20 . The heat insulating material 18 is erected on the inner side of the side wall of the vacuum chamber 20 . Ambient gas, such as argon gas, is in...

Claims

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