Soft error location and sensitivity detection for programmable devices
A programming device and sensitivity technology, applied in error detection/correction, redundant code error detection, electrical program control, etc., can solve the problems of reducing the performance of programmable devices, increasing power consumption, and "false positives" of programmable devices
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[0031] FIG. 1 is an overview of a CRAM array 110 and programming structure for a typical programmable device 100 . Programmable device 100 includes a plurality of CRAM cells organized into an array 110 of rows and columns. Address register 120 contains a set of lines, each of which addresses a column of CRAM cells 110 . Data register 130 contains data to be written to or programmed into a column of CRAM cells 110 , or data that has been read back from a column of CRAM cells 110 .
[0032] When data is written to CRAM cell 110, configuration controller 150 reads or accepts configuration data from a configuration memory, which may be on a separate chip in the form of configuration device 140, or may be contained in the same chip as programmable device 100. on the chip. Data is read from configuration memory and provided to data registers 130 . A column is programmed by strobing one of the lines addressed by address register 120 when a complete column of data is available.
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