Semiconductor device

Abstract

An improved semiconductor device having a gate electrode buried in a trench that a short circuit is hardly generated between a gate electrode and a source electrode at a termination of the gate electrode. A trench is formed in a semiconductor substrate. A gate electrode and a buried insulating film are buried in the trench. A source electrode is provided above the gate electrode via the buried insulating film. At the termination of the gate electrode, an interlayer insulating film is provided between the buried insulating film and the source electrode in such a way that the interlayer insulating film strides over the termination of the trench. Both of the buried insulating film and the interlayer insulating film function as an insulating film and prevent a short circuit at the termination of the gate electrode.

Description

[0001] This application is based on Japanese Patent Application No. 2006-249813, the contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a semiconductor device. Background technique [0003] For example, Japanese Laid-Open Patent Application Publication No. 2000-252468 and Japanese Laid-Open Patent Application Publication No. 2006-60184 have disclosed a conventional semiconductor device having a trench gate structure. In the above semiconductor device, the gate electrode and the insulating film covering the gate electrode are buried in the trench. [0004] 9 is a cross-sectional view showing a semiconductor device described in Japanese Laid-Open Patent Application Publication No. 2000-252468. In the semiconductor device 100 , an N-type drain region 102 and a P-type well region 103 are sequentially stacked on an N+ type semiconductor body 101 . Both the silicon body 101 and the drain region 102 operate as the dra...

AI Technical Summary

Problems solved by technology

Therefore, a short circuit is easily generated between the gate electrode 312 and the source electrode 317

Images