High-density plasma deposition reaction chamber and air injection ring for reaction chamber

Abstract

The invention discloses a high intensity plasma deposition reaction chamber and a gas injection ring for the reaction chamber, wherein, the reaction chamber comprises a reaction chamber cover, a reaction chamber side wall, a static electricity chuck and a gas injection ring; the gas injection ring is provided with a plurality of spray heads which are connected with a gas source and are distributed around the circumference of the gas injection ring; moreover, each spray head comprises a first spray head and a second spray head; the axial line of the first spray head is parallel to the plane in which the circumference of the gas injection ring is positioned, while the axial line of the second spray head and the plane intersect and form a certain angle. The invention realizes evener distribution of the gas plasma inside the reaction chamber and improves the evenness and flatness of the formed film without changing process conditions and influencing gap filling quality.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a high-density plasma deposition reaction chamber and a gas injection ring used in the reaction chamber. Background technique [0002] Chip processing is a planar processing process that includes the steps of growing different layers on the wafer. With the rapid development of semiconductor manufacturing technology, the feature size of the device is continuously reduced. In the semiconductor process, the method of increasing the number of deposited thin film layers is often used to expand in the vertical direction of the wafer. The thin film process has become the most advanced method in semiconductor manufacturing. One of the key processes, the quality of the process will not only affect the normal progress of the next process, but also affect the electrical and mechanical properties of the device, which in turn will affect the yield and output of the device....

AI Technical Summary

Problems solved by technology

However, the transformation of this kind of equipment is more complicated, and there are many places that need to be changed.

In addition, when the modified reaction chamber is working, it will still form a high gas density in the center, and the flatness of the formed film will not be significantly improved.

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