Method of depositing hafnium silicate assisted by catalyst

Abstract

A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and / or at a low temperature.

Description

technical field [0001] The present invention mainly relates to a method for depositing a hafnium silicate layer on a substrate by atomic layer deposition (ALD). Background technique [0002] In the field of semiconductor processing, flat panel display processing or other electronic device processing, vapor deposition processes play an important role in depositing materials onto substrates. As electronic device geometries continue to shrink and device densities continue to increase, feature size and aspect ratios become increasingly challenging. Therefore, conformal deposition of materials to form these devices is becoming increasingly important. [0003] While conventional chemical vapor deposition (CVD) has proven successful for device geometries and aspect ratios down to about 0.15 μm, more challenging device geometries require alternative deposition techniques. One technique that has attracted considerable attention is ALD. During an ALD process, reactive gases are seq...

AI Technical Summary

Problems solved by technology

Oxidation sources present many challenges when depositing high-k silicates due to the reaction of the oxidation source with the catalyst

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