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Method and system for improving critical dimension proximity control of patterns on a mask or wafer

A technology of key dimensions and control methods, which is applied in general control systems, control/regulation systems, and photoplate-making processes on patterned surfaces, and can solve problems such as difficulty in controlling the proximity process

Active Publication Date: 2008-06-04
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] This makes the approach process of independent / dense (independent-dense) patterns more difficult to control

Method used

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  • Method and system for improving critical dimension proximity control of patterns on a mask or wafer
  • Method and system for improving critical dimension proximity control of patterns on a mask or wafer
  • Method and system for improving critical dimension proximity control of patterns on a mask or wafer

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Embodiment Construction

[0058] The following disclosure provides many different embodiments or examples for implementing the features of the present invention. Combinations or permutations of elements of specific embodiments are described below. Of course, the examples are for illustration only, without any intention of limiting the present invention. In addition, the current disclosure may repeatedly refer to the combination of numbers and / or words in different examples. This repetition is used for simplicity, clarity and a relationship not disclosed in itself. The relationship between multiple embodiments and / or disclosed between types. And, in the description, a first feature pervades or is formed on a second feature, as it may include multiple embodiments, the first and second features in these embodiments are formed in direct association, And it is also possible to include additional features formed in these embodiments which are interposed between the first and second features so that the fir...

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Abstract

A method for improving critical dimension uniformity of a substrate is provided. An equation based on a proximity trend of a pattern on a first substrate is determined. The equation is applied in a regression model to determine a parameter value of a second substrate. A recipe of an exposure equipment is adjusted based on the parameter value for exposure of the second substrate. Also, a system for controlling critical dimension of a pattern on a substrate is provided. The system includes an advance process control system for collecting exposure data of the substrate, and a regression model within the advance process control system for analyzing the exposure data and determining a parameter value of a recipe of the exposure tool. The regression model is operable to determine an equation based on a proximity trend of the substrate.

Description

technical field [0001] The present invention relates to a semiconductor manufacturing technology, in particular to an improved method and system for Proximity Control (Critical Dimension, CD) of a pattern on a mask or a wafer. Background technique [0002] In semiconductor process technology, the critical dimension of a mask or wafer is getting smaller and smaller, for example, its line width size is reduced from 45 nm to 32 nm. Therefore, it is very important to maintain the CD uniformity of various patterns (Pattern), that is, the CD uniformity is at an acceptable level. Certain types of patterns require different levels of CDU. For example, in terms of 45nm process, the isolated line (isolated line) used in the microprocessor circuit needs to be between 3 standard deviations (sigma) of the line width of 1.3 nanometers (nm); and the dense line used in the memory array (dense line) needs to be between 3 standard deviations (sigma) of the line width of 3.4 nanometers. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/00
CPCG05B13/042
Inventor 林政旻邱仁玺
Owner TAIWAN SEMICON MFG CO LTD