Start circuit of reference voltage source suitable for Sub1V current mode

A reference voltage source and start-up circuit technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., can solve the problems that cannot meet the application requirements of low power supply voltage, and achieve the elimination of chip abnormal operation, easy implementation, and simple circuit Effect

Inactive Publication Date: 2008-06-11
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional bandgap reference sources [3, 4, 5, 6] can only generate a fixed reference voltage of about 1.2V, which cannot meet the application requirements of low power supply voltage.

Method used

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  • Start circuit of reference voltage source suitable for Sub1V current mode
  • Start circuit of reference voltage source suitable for Sub1V current mode
  • Start circuit of reference voltage source suitable for Sub1V current mode

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Embodiment Construction

[0030] The specific implementation manner of the present invention will be further described below by needing to design and realize a 0.6V voltage reference source. The specific design steps are as follows:

[0031] 1) From the perspective of starting the circuit without affecting the normal working state of the circuit, set an appropriate value of the control voltage VCOMP, that is, set it to 0.5V, which can be generated by the bias circuit part.

[0032] 2) In order to reduce power consumption as much as possible, select a suitable bias current of 3.0 uA, so as to determine the size of the first PMOS transistor 11 .

[0033] 3) From the perspective of the compromise between the time of the startup process and the reduction of the power consumption of the startup circuit part, select the appropriate bias (ie injection) current size, set the injection current IA to 3.0uA, so as to determine the first PMOS transistor 11. Sizes of the second PMOS transistor 12 and the third PMO...

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Abstract

The invention belongs to the technology field of a reference source analog integrated circuit, in particular to a starting circuit being suitable for a reference voltage source wit Sub1V current mode. The circuit comprises three PMOS pipes, a first PMOS pipe is a bias PMOS pipe, at the grid end, bias voltage is provided by VBIAS, the leakage end is connected with source-end of a second PMOS pipe and a third PMOS pipe; the leakage end of the second PMOS pipe is grounding, while the grid end is connected with compare threshold voltage; the grid end of the third PMOS pipe is connected with the output of reference source, while the leakage end is connected with an operational amplifier. The starting circuit of the invention can avoid the aftereffect of abnormal working the operational amplifier maladjustment voltage Vos brings to chips and release zero state. The starting circuit requires three MOS pipes only, has simple structure and easy realization, and is able to be applied in traditional reference voltage source.

Description

technical field [0001] The invention belongs to the technical field of reference source analog integrated circuits, and in particular relates to a start-up circuit of a reference voltage source suitable for a Sub1V current mode. technical background [0002] Bandgap reference sources are widely used in various analog integrated circuits and mixed-signal circuits due to their precise absolute value of output voltage, low temperature coefficient and good power supply rejection ratio (PSRR) [1]. As the process size shrinks, the power supply voltage for chip operation also shrinks simultaneously. STMicroelectronics (NYSE: STM), the world's leading semiconductor manufacturer, announced the company's 45nm process CMOS design platform before August 2007. On this platform, customers can provide low-power wireless and portable communications Applied Devices develops next-generation System-on-Chip SoC products. The manufacturing process has a logic circuit density of 1.6 million gat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/24
Inventor 张科李文宏刘冉
Owner FUDAN UNIV
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