Method for etching throughhole

A technology of through-hole etching and etching solution, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid-state devices, etc., and can solve the problems of reducing the opening of through-holes

Inactive Publication Date: 2008-06-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the openings of the through holes formed by the above method all have a sharp corner structure, so that the sharp corners are still easy to form accumulations of deposition materials during the subsequent deposition process, which reduces the effect of expanding the opening of the through holes.

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  • Method for etching throughhole
  • Method for etching throughhole
  • Method for etching throughhole

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Embodiment Construction

[0024] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0025] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

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Abstract

The invention relates to a method of etching through holes. The method comprises the following steps: a through hole etching substrate is formed on a semiconductor substrate; an anisotropic etching manufacturing procedure is performed, a through hole is etched on the through hole etching substrate; a sacrificial layer is deposited, and is filled into the through hole; the sacrificial layer is etched, so as to expose the opening of the though hole; an istropic etching manufacturing procedure is performed, so as to ensure the opening of the through hole to have a round angle structure; the sacrificial layer is removed. The invention adopts an anisotropic method to etch the through hole firstly, and then adopts an isotropic method to expand the opening of the through hole, and therefore a through hole structure with a round angle opening can be formed, and compared with the through structure with a closed angle opening, as for the through hole with the identical aspect ratio, the piling of the deposition materials is not easy to occur at the opening.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a through hole etching method. Background technique [0002] As the size of the device shrinks, the size of the through hole also shrinks. As a result, when filling the through hole according to the traditional process, the filling ability of the through hole is limited, and holes are easy to be generated during the filling process. The possible impact of this hole on the integrated circuit device includes: for the via hole in the pre-metal dielectric layer, if the hole is generated when the via interconnection material is subsequently filled, then after the planarization process, it is easy to be deposited in the subsequent metal layer process. The deposition surface of the metal layer is uneven, that is, it is easy to cause the filling of the metal layer material to the through hole, and because the current through hole interconnection material is mostl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/768H01L23/522
Inventor 程卫华叶彬曾红林
Owner SEMICON MFG INT (SHANGHAI) CORP
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