Method and device for drying wafer

Abstract

The invention discloses a wafer drying method which comprises the following steps that: when a wafer is completely immersed in liquid surface, washing liquid steam and drying gas are fed towards the liquid surface and the space above the liquid surface; the wafer is lifted out of the liquid at a predetermined speed, and when the wafer becomes higher than the liquid surface, the washing liquid steam is removed and the drying gas is fed yet. During the process of lifting the wafer away from the liquid surface, the drying gas is fed all the time, and when the wafer is completely departed from theliquid surface, the drying gas is fed until the wafer surface is dried. The inventive technical proposal can efficiently avoid the miscible problem of a protective layer and the washing liquid steambycontrolling the volume of the washing liquid steam, and can ensure the yield of Marangoni force for the drying process. Additionally, the invention can increase the drying rate by the heating process and increase the working efficiency.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process flow, more specifically, to a wafer drying method and device. Background technique [0002] After the wafer is wet-etched or cleaned, a lot of water or cleaning solution residues will be left on the surface of the chip. Since impurities are dissolved in the water or cleaning solution residues, if these residual liquids are left on their own If it is evaporated and dried, then these impurities will stick to the surface of the wafer again, causing pollution and even destroying the structure of the wafer. Therefore, wafer drying is required to remove these residual liquids. [0003] A well-known Marangoni (Marangoni) drying method can generate a surface tension gradient, and the residual liquid is guided away from the wafer surface through the introduction of the rinse liquid, so that the surface is substantially free of liquid. In the commonly used Marangoni method, a solvent miscible with ...

AI Technical Summary

Problems solved by technology

When in a temperature environment above 30°C, the protective layer (such as photoresist or isolation layer) on the surface of the wafer will dissolve with IPA vapor, and the pattern on the surface of the wafer will be destroyed as a result, resulting in damage to the wafer

If not by heating, then in Figure 1d The steps shown require an unbearably long wait, greatly reducing the efficiency of the work

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