Discharging unit for enhancing protection circuit over current capability and its manufacture method

A discharge unit and protection circuit technology, applied in circuits, electrical components, electric solid devices, etc., can solve problems such as poor overcurrent capability and damage to fragile devices inside integrated circuit chips, so as to increase discharge efficiency and enhance overcurrent capability , the effect of increasing the resistance

Inactive Publication Date: 2008-07-02
GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a discharge unit that enhances the overcurrent capability of the protection circuit and its manufacturing method, which can solve the problem that the internal fragile devices of the integrated circuit chip are destroyed due to the poor overcurrent capability of the current ESD protection circuit

Method used

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  • Discharging unit for enhancing protection circuit over current capability and its manufacture method
  • Discharging unit for enhancing protection circuit over current capability and its manufacture method
  • Discharging unit for enhancing protection circuit over current capability and its manufacture method

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Embodiment Construction

[0020] The structure of the discharge unit for enhancing the overcurrent capability of the protection circuit of the present invention is shown in FIG. 2 . The discharge unit is a Darlington tube structure composed of composite transistors. The discharge unit shown in Figure 2 includes a first NPN bipolar transistor T 1 and a second NPN bipolar transistor T 2 Composite transistors with a Darlington structure, the first resistor R1 and the second resistor R2. NPN transistor has three terminals of collector, base and emitter. The input terminal n1 of the discharge unit is T 1 Tube and T 2 The collector of the tube is connected to the pad; the output terminal n2 of the discharge unit is the second NPN bipolar T 2 The emitter of the tube is connected to the discharge bus VSS. first transistor T 1 The base of the first resistor R1 and the second transistor T 2 After the base is connected, it is connected to the discharge bus through the second resistor R2.

[0021] The dis...

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PUM

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Abstract

The invention provides a discharging unit for enhancing over current capability of a protective circuit, which is composed of a compound transistor with darlington structure with an input terminal and an output terminal. The input terminal is connected with a bonding pad and the output terminal is connected with a discharging bus / power bus. The discharging unit comprises two compound transistors of darlington structure with an NPN / PNP bipolar type and two resistances; well isolation can be adopted to manufacture the two resistances in the discharging unit so as to increase the resistance value of the two resistances in the discharging unit when the discharging unit of the two NPN type transistors are manufactured; meanwhile the emitter of NPN bipolar type transistors and the area of the collector can be enhanced to increase the amplification efficiency of the discharging unit; well isolation and shallow-trench isolation to the collector of the two PNP tube can be adopted for manufacturing the discharging unit of the two PNP transistors. By adopting the discharging unit of compound tube with the darlington structure and the skillful manufacturing method thereof, the over current capability and discharging efficiency of the protective circuit are enhanced.

Description

technical field [0001] The invention relates to the design field of electrostatic discharge (ESD) protection circuits, in particular to a discharge unit for enhancing the overcurrent capability of the protection circuit and a manufacturing method thereof. Background technique [0002] Electrostatic discharge (ESD) events will occur in the manufacturing process of integrated circuit chips and in the final system application. The energy associated with this static burst has the potential to destroy the fragile devices in today's integrated circuit chips. The external terminal or pad (PAD) is the connection point between the integrated circuit chip and the outside world, and thus acts as a pathway for ESD. ESD acting on a pad may couple a very high voltage to the internal devices of the integrated circuit chip connected to this pad, causing some fragile devices to be destroyed. Therefore, each pad connected to the outside of the integrated circuit chip during packaging needs ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L23/60H01L21/8222
Inventor 单毅
Owner GRACE SEMICON MFG CORP
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