Methods of restoring data in flash memory devices and related flash memory device memory systems

A device, flash memory technology, applied in the field of semiconductor storage devices, which can solve problems such as frequent read errors

Active Publication Date: 2008-07-16
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such read errors occur more frequently as the number of bits of data stored in each memory cell increases
Furthermore, this problem can become even more severe for the case of threshold voltage distributions of overlapping adjacent states shown using the threshold voltage distributions depicted by dashed lines in Figure 2

Method used

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  • Methods of restoring data in flash memory devices and related flash memory device memory systems
  • Methods of restoring data in flash memory devices and related flash memory device memory systems
  • Methods of restoring data in flash memory devices and related flash memory device memory systems

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Embodiment Construction

[0044] Embodiments of the invention will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and thorough, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout.

[0045] It will be understood that although the terms first, second etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present invention. As used herein,...

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Abstract

A method for setting a read voltage in a memory system including a flash memory device and a storage controller controlling the flash memory device, comprising sequentially changing the distributed read voltage to read page data from the flash memory device; forming a memory device having a data bit number and a distributed read voltage distribution table, the data bit number indicates the erasing state in the page data read from the flash memory device respectively, and the distributed read voltage is corresponding to the read page data; the distributed read voltage corresponding to the data bit number is detected according to the distribution table, and every A data bit number represents the maximum point of the possible cell state of the memory cell; and a new read voltage is defined according to the detected distributed read voltage.

Description

[0001] Cross References to Related Applications [0002] This US nonprovisional patent application claims priority under 35 U.S.C § 119 to Korean Patent Application 2006-102379 filed on October 20, 2006, the entire contents of which are incorporated herein by reference. field of invention [0003] The present invention relates to semiconductor memory devices, and more particularly to electrically erasable and programmable flash memory devices. Background technique [0004] Electrically Erasable and Programmable Read-Only Memory (EEPROM) devices refer to a class of semiconductor memory devices in which data stored therein can be erased and replaced with new data. In some conventional EEPROM devices, only one memory region can be erased and programmed at any given time. A flash memory device is an EEPROM device that can erase or program multiple memory areas simultaneously with one programming operation. Therefore, flash memory devices can operate at higher speeds than other...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26
CPCG11C16/349G11C16/3495G06F12/00G11C16/34G06F12/16
Inventor 朴起台金奇南李永宅
Owner SAMSUNG ELECTRONICS CO LTD
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