Slow wave structure of electromagnetism band gap waveguide based on composite defect
An electromagnetic bandgap structure and electromagnetic bandgap technology, applied in the field of physical electronics, can solve the problems of difficult process and high Q value, and achieve the effects of high-efficiency energy exchange, increased working bandwidth, and optimized dispersion characteristics
Inactive Publication Date: 2010-06-02
SOUTHEAST UNIV
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Problems solved by technology
The use of metal electromagnetic bandgap structures to realize functional devices such as resonators has very good advantages, and can make devices work in the S-band on a larger scale. However, the original slow-wave structures or resonators based on electromagnetic bandgap structures require metal grids. Only when the diameter / period ratio of the dot is below 0.4 can the single-mode working state of the device be guaranteed, and the small diameter / period ratio will bring difficulties in the process, and its Q value is not as high as when the diameter / period ratio is large.
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[0025] refer to figure 1 and figure 2 , a slow wave structure based on a composite defect electromagnetic bandgap waveguide, including an electromagnetic bandgap structure, an input port 1 and an output port 2 are arranged on the electromagnetic bandgap structure, and the electromagnetic bandgap structure includes a cavity 5, and in the cavity 5 There are metal partitions 6 , electron injection channels 4 and metal pillars 31 . The metal pillars are distributed in a regular hexagon around the electron injection channel 4 (the lattice distribution of the electromagnetic bandgap structure in this specific embodiment is a regular hexagon, and the lattice distribution of the electromagnetic bandgap structure can also be other shapes, such as square, regular octagonal polygon, etc., the metal pillars can be arranged around the electron injection channel 4 according to the lattice distribution), and the diameter of the inner ring (the first circle distributed around the electron i...
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The invention discloses a slow wave structure based on electromagnetic band gap waveguide with complex defect, which comprises an electromagnetic band gap structure provided with an input port and anoutput port thereon and including a cavity and a metal separation, an electron injection channel and metal pillars arranged in the cavity. The slow wave structure is characterized in that the metal pillars are arranged in lattice distribution around the electron injection channel; and the diameter of the inner-ring metal pillar is larger than that of the outer-ring metal pillar. By adopting the electromagnetic band gap structure with complex defect, the invention can achieve a single-mode work state and high-Q value work state at high diameter / cycle ratio and overcome the difficulty in manufacture process resulting from small diameter / cycle ratio, thus achieving better heat dissipation characteristics. The work bandwidth is significantly larger than that of the prior slow wave structure with an electromagnetic band gap structure with an identical size, thus optimizing the dispersion characteristics of the prior slow wave structure.
Description
technical field [0001] The invention relates to a slow-wave structure based on an electromagnetic bandgap structure, in particular to a slow-wave structure based on a compound defect electromagnetic bandgap waveguide, and belongs to the technical field of physical electronics. Background technique [0002] The electromagnetic bandgap structure (called Photonic Band Gap (Photonic Band Gap) in the field of optical frequency, generally called Electromagnetic Band Gap (EBG) in the field of microwave) is an artificial periodic structure that can Make devices on it and limit the direction of electromagnetic waves in it. The use of metal electromagnetic bandgap structures to realize functional devices such as resonators has very good advantages, and can make devices work in the S-band on a larger scale. However, the original slow-wave structures or resonators based on electromagnetic bandgap structures require metal grids. The single-mode working state of the device can only be en...
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IPC IPC(8): H01P3/127H01P1/207H01P3/12
CPCH01P1/2005
Inventor 柏宁丰孙小菡
Owner SOUTHEAST UNIV