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Image sensor, its forming method and semiconductor device

An image sensing device, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, radiation control devices, etc., can solve the problems of reducing spatial resolution, sensitivity, poor color separation, etc.

Active Publication Date: 2008-09-10
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Crosstalk can reduce spatial resolution and light sensitivity, and cause poor color separation

Method used

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  • Image sensor, its forming method and semiconductor device
  • Image sensor, its forming method and semiconductor device
  • Image sensor, its forming method and semiconductor device

Examples

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Embodiment Construction

[0041] The concepts of the present invention will be described below through examples, and each example is only for illustration purposes, and is not intended to limit the scope of the present invention. In the drawings or descriptions, similar or identical parts will be given similar or identical reference numerals. In the drawings, the shape or thickness of elements may be enlarged or reduced. Components not shown or described in the figures may be in forms known to those skilled in the art. Furthermore, when it is stated that a layer is on a substrate or another layer, the layer may be directly on the substrate or another layer, or there may be an intervening layer therebetween.

[0042] Please refer to figure 1 , which shows a top view of an image sensor according to an embodiment of the present invention. Image sensor 10 includes pixels 50 arranged in a grid or array, which may also be referred to as image sensing elements. Additional circuitry and I / Os may be provide...

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Abstract

The invention provides an image sensor device, a forming method and a semiconductor device. The image sensor device includes a semiconductor substrate having a first type of conductivity, a semiconductor layer having the first type of conductivity formed on the semiconductor substrate, and pixels formed in the semiconductor layer. The semiconductor layer includes a first deep well having the first type of conductivity and substantially underlying the plurality of pixels, and a second deep well having a second type of conductivity different from the first type of conductivity and substantially underlying the first deep well. The device and forming method provided by the invention has high efficiency and cost benefit, and can reduce crosstalk interference.

Description

technical field [0001] The present invention relates to a semiconductor device and its forming method, and in particular to an image sensing device and its forming method. Background technique [0002] In semiconductor technology, an image sensor can be used to sense light projected onto a semiconductor substrate. Complementary metal oxide semiconductor (CMOS) image sensors and charge-coupled device (CCD) sensors have been widely used in various fields, such as digital still cameras. These sensors utilize pixel arrays or image sensing elements, which may include light emitting diodes and MOS transistors, to receive light energy to convert the image into digital data. [0003] However, the image sensing device faces the problem of cross-talk. The light targeted to an image sensor element and the electrical signal generated by the light may spread to adjacent image sensor elements, which causes crosstalk. Crosstalk can reduce spatial resolution and light sensitivity, and ca...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/822
CPCH01L27/14654H01L27/1463
Inventor 刘汉琦张中玮伍寿国翁烔城柯钧耀
Owner TAIWAN SEMICON MFG CO LTD
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