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Electrode structure, capacitor and method for producing electrode structure

A structure and electrode technology, applied in the manufacture of electrolytic capacitors, capacitor electrodes, electrolytic capacitors, etc., to achieve the effect of excellent adhesion and high electrostatic capacity

Active Publication Date: 2011-03-16
TOYO ALUMINIUM KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, even with this method, it is still difficult to obtain an electrode structure with excellent adhesion and high capacitance while maintaining a desired withstand voltage.

Method used

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  • Electrode structure, capacitor and method for producing electrode structure
  • Electrode structure, capacitor and method for producing electrode structure
  • Electrode structure, capacitor and method for producing electrode structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~5、 comparative example 1~2

[0065] An aluminum rigid foil (JIS A1070-H18) with a thickness of 30 μm was immersed in a titanium alkoxide solution to form a dielectric precursor material with a thickness of 0.15 μm on both sides.

[0066] Then, the aluminum material on which the dielectric precursor material was formed was heated for 12 hours under the conditions of the atmosphere and temperature shown in Table 1 to obtain an electrode structure.

[0067] The composition of titanium alkoxide solution is, Ti(n-OC 4 h 9 ) 4 : 0.15 mol; CH 3 COCH 2 COCH 3 : 0.45 mol; C 2 h 5 OH: 18 moles; H 2 O: 0.3 mol. In an environment with a humidity of 40% or less, the above-mentioned aluminum material was immersed in the above-mentioned titanium alkoxide solution for 3 seconds, and then heated at 100° C. for 10 minutes in air to make it dry. The above-mentioned dipping treatment and heating treatment were repeated three times to form a dielectric precursor material.

[0068] In the electrode structure obtained...

Embodiment 6~8、 comparative example 3~4

[0070] An aluminum rigid foil (JIS A1030-H18) having a thickness of 50 μm was dipped in a titanium oxide dispersion solution to form a dielectric precursor having a thickness shown in Table 2 on both sides.

[0071] Then, the aluminum material on which the dielectric precursor material was formed on the surface was placed in a methane gas atmosphere in Examples 6 to 8, in air in Comparative Example 3, and in an argon atmosphere in Comparative Example 4. , were heated at a temperature of 550° C. for 12 hours to obtain electrode structures.

[0072] The titanium oxide dispersed aqueous solution is prepared by heating titanium hydroxide obtained by hydrolyzing titanium sulfate in an oxygen atmosphere to obtain titanium sulfide, and adding a small amount of nitric acid therein. In addition, it was confirmed by X-ray diffraction that this titanium oxide had an anatase crystal structure. In an environment with a humidity of 40% or less, the above-mentioned aluminum material was imm...

Embodiment 9~13

[0074] An aluminum hard foil with a thickness of 80 μm is immersed in an alkoxide solution or a sol solution containing titanium, tantalum, hafnium, zirconium or niobium, and a dielectric precursor material with a thickness of 0.4 μm is formed on both sides.

[0075] Then, the aluminum material on which the dielectric precursor material was formed was heated at a temperature of 550° C. for 12 hours in an acetylene gas atmosphere to obtain an electrode structure.

[0076] The nominal purity of the aluminum foil is 99.9% by mass, and the mass analysis values ​​of the composition are: silicon 75ppm, iron 72ppm.

[0077] The composition of the tantalum alkoxide solution used in embodiment 9 is, Ta(OC 2 h 5 ) 5 : 0.15 mol; CH 3 COCH 2 COCH 3 : 0.45 mol; C 2 h 5 OH: 18 moles; H 2 O: 0.3 mol.

[0078] The composition of the titanium alkoxide solution used in Example 10 is the same as the solution used in Examples 1 to 5, being Ti(n-OC 4 h 9 ) 4 : 0.15 mol; CH 3 COCH 2 C...

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Abstract

The present invention provides an electrode structure, a manufacturing method thereof and a capacitor with the electrode structure. In the electrode structure, an aluminum material as base material and a dielectric layer are excellent in adhesion, which can keep prospective voltage resistance, and obtain high static capacitance. The electrode structure includes: an aluminum material; a dielectriclayer, formed on the surface of the aluminum material, including valve metal; and an intermediate layer, formed between the aluminum material and the dielectric layer, including aluminum and carbon. The manufacturing method of the electrode structure includes: a step of forming the precursor of the dielectric layer with valve metal on the surface of the aluminum material; a step of configuring the aluminum material with the precursor in the space with hydrocarbon substance; and a step of heating under the state of configuring the aluminum material with the precursor in the space with hydrocarbon substance.

Description

technical field [0001] The present invention generally relates to an electrode structure, a capacitor, and a method for manufacturing the electrode structure, and more particularly, to an electrode structure used as an electrode material for a capacitor or the like, a capacitor having the electrode structure, and a method for manufacturing the electrode structure. Background technique [0002] For example, as described in JP-A-62-222512 (Patent Document 1), dielectric materials having a high dielectric constant are widely used in electronic materials such as capacitors, semiconductor elements, and light-emitting elements. [0003] A capacitor has two electrodes, an anode and a cathode. As the anode material of electrolytic capacitors, valve metals (also called valve metals) such as aluminum and tantalum that can form an insulating oxide film on the surface are used. Here, the term "valve metal" refers to a metal covered with an oxide film by anodic oxidation, and examples t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/04H01G9/00H01G9/055
CPCH01G9/0032H01G9/045H01G9/07H01G9/00H01G9/04H01G9/055
Inventor 井上英俊足高善也
Owner TOYO ALUMINIUM KK