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Plasma processing apparatus, focus ring, and susceptor

A plasma and processing device technology, applied in the field of plasma processing devices, can solve the problems that the temperature change cannot be suppressed, the cooling effect of the focus ring cannot be improved, etc., to prevent the increase of costs, prevent the increase, and increase the degree of close contact Effect

Active Publication Date: 2010-06-02
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This creates a problem that the change in the temperature of the focus ring caused by the change in the magnitude of the high-frequency electric energy cannot be suppressed, so the cooling effect of the focus ring cannot be improved

Method used

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  • Plasma processing apparatus, focus ring, and susceptor
  • Plasma processing apparatus, focus ring, and susceptor
  • Plasma processing apparatus, focus ring, and susceptor

Examples

Experimental program
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Embodiment Construction

[0093] The invention will now be described in detail with reference to the accompanying drawings which illustrate preferred embodiments.

[0094] figure 1 is a sectional view showing the configuration of a plasma processing apparatus using a susceptor in the first embodiment of the present invention.

[0095] exist figure 1 Among them, the plasma processing apparatus is constructed as an RIE type plasma processing apparatus with a cylindrical chamber 10, which is composed of a metal, such as aluminum or stainless steel, and serves as a safety basis; here the chamber 10 has been set A disk-shaped lower electrode 11 is provided, on which a wafer W is placed as an object to be processed. The lower electrode 11 consists, for example, of aluminum and is supported by a cylindrical support part 13 extending vertically upwards from the bottom of the cavity 10 , via an insulating cylindrical support element 12 .

[0096] Form an exhaust channel 14 between a side wall of the cavity...

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Abstract

A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion facesthe electrostatic chuck with the dielectric material portion therebetween.

Description

[0001] This application is a divisional application of the application with the same title filed on April 23, 2004 with the application number 2004100341657. technical field [0002] The invention relates to a plasma processing device, a focus ring and a susceptor. Background technique [0003] Examples of well-known plasma processing apparatuses include CVD apparatuses, etching apparatuses, ashing apparatuses, and the like. Such a plasma processing apparatus has a plasma processing chamber in which is mounted a susceptor on which a wafer W, an object to be processed, is mounted. Such as Figure 16 As shown, the base is composed of a disk-shaped electrostatic chuck 51, on which a wafer W is mounted, and the focus ring 52 is made of only conductive material or only dielectric material, and is arranged on the electrostatic chuck 51 on the peripheral edge of the upper surface. [0004] When plasma processing is performed on a wafer W, the wafer W is mounted on the electrostat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/68H01L21/205H01L21/3065C23F4/00C30B25/12
Inventor 远藤升佐岩渕纪之加藤茂昭大久保智也广瀬润长仓幸一輿水地盐传宝一树
Owner TOKYO ELECTRON LTD