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Photomask and method for forming a non-orthogonal feature on the same

A non-orthogonal, photomask technology applied in the field of photolithography

Inactive Publication Date: 2008-11-12
TOPPAN PHOTOMASKS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as the dimensions of the features required to fabricate smaller devices decrease below approximately 300nm, the large exposures and reduced resolution required to write these small features render these techniques ineffective

Method used

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Embodiment Construction

[0029] Preferred embodiments of the present invention and their advantages are best understood by referring to FIGS. 1 through 8, wherein like numerals are used to indicate like and corresponding parts.

[0030] FIG. 1 shows a cross-sectional view of an example photomask assembly 10 . Photomask assembly 10 includes pellicle assembly 14 mounted on photomask 12 . Substrate 16 and patterned layer 18 form photomask 12, otherwise known as a mask or reticle, which may have a variety of sizes and shapes, including but not limited to circular, rectangular, or square. The photomask 12 can also be any of a variety of photomask types including, but not limited to, a primary master, a five inch reticle, a six inch reticle, a nine inch reticle, or any other suitable size that can be used to map a circuit pattern The image is projected onto the reticle on the semiconductor wafer. Further photomask 12 may be a binary mask, a phase-shift mask (PSM) (e.g., an alternating-aperture phase-shift...

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Abstract

A photomask and method for forming a non-orthogonal feature on the photomask are provided. A method for forming a non-orthogonal feature on a photomask blank includes providing a mask pattern file including a primitive shape and fracturing the primitive shape into a plurality of writeable shapes. A non-orthogonal feature formed by the writeable shapes is formed on a photomask blank by using a lithography system to image the writeable shapes from the mask pattern file onto a resist layer of the photomask blank.

Description

technical field [0001] The present invention relates generally to photolithography, and more particularly to photomasks and methods for forming nonorthogonal features on photomasks. Background technique [0002] As device manufacturers continue to manufacture smaller and more complex devices, the photomasks used to make these devices continue to require a wider range of capabilities. A photomask, also known as a reticle or mask, generally includes a substrate having a patterned layer formed on the substrate. The patterned layer typically includes a pattern formed in an absorber material, such as chrome, that depicts an image that can be transferred to a wafer in a photolithography system. For some applications, these devices may require the formation of non-orthogonal features. As device feature sizes decrease, it becomes more difficult to fabricate complex features with non-orthogonal patterns. Previous techniques for fabricating non-orthogonal features (eg, circular fea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F9/00G03C5/00G06F17/50
CPCG03F7/2063G03F1/78G03F1/14G03F1/00G03F1/68
Inventor S·S·麦唐纳D·梅伦欣
Owner TOPPAN PHOTOMASKS INC
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