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Moisture sensor

A humidity sensor and porosity technology, applied in instruments, scientific instruments, measuring devices, etc., can solve problems such as reducing resistance, increasing the area of ​​sensor chips, and difficult to measure resistance values.

Inactive Publication Date: 2008-11-19
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Unfortunately, the patent dates from 1977 and the process described cannot be easily integrated into modern integrated circuit processes
This structure cannot be easily used - in the example given in the patent, the resistance value of the electrode with a diameter of "60mil" (about 1.5mm) is as high as order of magnitude 10 10 ohm, such a resistance value is difficult to measure
Larger area for lowering resistance further increases already large sensor chip area

Method used

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Examples

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Embodiment Construction

[0029] see figure 1 , a low dielectric constant porous silicone glass 20 having a dielectric constant (k) of about 2.7 is deposited on the substrate 10 . The porosity of glass 20 is greater than 10%. Porosity is defined as the volume of pores divided by the total volume including pores and interpore material.

[0030] Next, a bottom antireflective coating (BARC) layer 22 is deposited, followed by a resist 24 . Subsequently, if figure 2 The resist 24 is shown patterned. The BARC layer improves the lithographic properties of the resist 24, and the BARC layer is especially useful in high resolution lithography. The BARC layer 22 can be omitted if not required.

[0031] Next, trenches 26 are etched to define the interdigitated comb structures of the first and second trenches. The resist 24 and BARC layer 22 are then removed to form image 3 Structure.

[0032] Subsequently, a barrier layer 28 of the first barrier material is deposited covering the sidewalls and bottoms o...

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Abstract

A moisture sensor includes interdigitated first and second electrodes formed in trenches 26. A porous low-k dielectric 20 is provided between the electrodes. The electrodes are of Cu 30 surrounded by a barrier layer 28,32 to protect the Cu from corrosion. TiN may be used as barrier layer 28 and selectively deposited barrier material such as CoWB, MoWB or NiMoP as barrier layer 32.

Description

technical field [0001] The present invention relates to a humidity sensor and a manufacturing method thereof. Background technique [0002] Existing humidity measurement devices often cannot measure low humidity levels very accurately. In addition, most existing designs cannot be scaled down and therefore cannot be integrated into ever-shrinking integrated circuits. [0003] US 4,057,823 describes a humidity sensor integrated in an integrated circuit. A small area of ​​the chip is made porous by anodic etching. This region is oxidized to form porous silica and metal electrodes deposited on the partially porous region. The large surface area of ​​the dielectric caused by the porous structure means that ambient moisture diffuses into the dielectric and absorbs on the silica. The capacitance or conductance of the device changes and can be measured. [0004] Unfortunately, the patent dates from 1977, and the process described cannot be easily integrated into modern integrat...

Claims

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Application Information

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IPC IPC(8): G01N27/12G01N27/22
CPCG01N27/223Y10T29/43
Inventor 罗马诺·霍夫曼朱利恩·M·M·米舍隆
Owner NXP BV