Polishing pad, the use thereof and the method for manufacturing the same

Abstract

The present invention mainly relates to a polishing pad comprising a base material comprising fibers; a membrane with low permeability; a two-component paste formed on the upper surface of the membrane with low permeability for adhering the base material to the membrane with low permeability; and a polyurethane paste formed on the lower surface of the membrane with low permeability. A method of polishing a substrate comprising using the polishing pad and a method for manufacturing the polishing pad as described above are also provided. The polishing pad as mentioned above prevents the polishing pad from detaching from the polishing platen or head. The polishing pad is easy to be replaced without leaving residues on the polishing platen or head.

Description

technical field [0001] The invention relates to a polishing pad for chemical mechanical polishing. Background technique [0002] Chemical mechanical polishing (CMP) is a procedure for planarizing the surface of a substrate using a polishing pad. CMP is typically applied to grinding lenses, mirrors, substrates for liquid crystal displays, silicon wafers, and oxide and / or metal layers on silicon wafers. [0003] Taking a silicon wafer as an example, a monocrystalline silicon block is first sliced. The wafer is typically ground to flatten it for subsequent chemical etching. A grinding process is required after the etching process. During the polishing process, the polishing pad, along with the slurry, chemically reacts with the silicon atoms on the wafer surface such that the reacted surface is softer than the underlying silicon. In addition, the reacted surface is constantly wiped off, resulting in exposure of fresh silicon to the slurry and pad. [0004] Conventional abr...

AI Technical Summary

Problems solved by technology

In addition, when changing the polishing pad, it is easy to leave the residue of PSA on the grinding plate or grinding head, and it is necessary to remove the residue of PSA and lengthen the time required for changing the polishing pad

In addition, the carrier film thickness of about 0.1 mm is too thin and prone to fold lines

On the other hand, the acid and alkali resistance of conventional adhesives is not satisfactory

Thus, the effect and efficiency of CMP are reduced

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