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Memory devices and methods of manufacturing the same as well as memory array and method of manufacturing the same

A memory array and storage device technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of low integration density, slow operation speed, etc.

Active Publication Date: 2008-12-17
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional flash memory devices have lower integration density and slower operating speed when compared with conventional DRAM

Method used

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  • Memory devices and methods of manufacturing the same as well as memory array and method of manufacturing the same
  • Memory devices and methods of manufacturing the same as well as memory array and method of manufacturing the same
  • Memory devices and methods of manufacturing the same as well as memory array and method of manufacturing the same

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Embodiment Construction

[0032] Various example embodiments will now be described more fully with reference to the accompanying drawings in which some example embodiments are shown. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0033] Detailed illustrative example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. This invention may, however, be embodied in many alternative forms and should not be construed as limited to only the example embodiments set forth herein.

[0034]Therefore, while the example embodiments are capable of various modifications and alternative forms, the embodiments of the example embodiments are shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but on the contrar...

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PUM

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Abstract

Memory devices and methods of manufacturing the same, memorizer array and method of manufacturing the same are provided. In a memory device, a memory-switch structure is formed between a first and second electrode. The memory-switch structure includes a memory resistor and a switch structure. The switch structure controls current supplied to the memory resistor. A memory region of the memory resistor and a switch region of the switch structure are different from each other.

Description

technical field [0001] The present invention relates to a storage device and its manufacturing method as well as a memory array and its manufacturing method Background technique [0002] A conventional semiconductor memory device includes many memory cells connected in a circuit. In a conventional dynamic random access memory (DRAM), for example, a unit memory cell may consist of a switch and a capacitor. DRAM can have relatively high integration density and relatively fast operating speed. However, such devices are volatile since conventional DRAM loses all stored data when power is cut off. In contrast, flash memory is non-volatile because conventional flash memory retains stored data even when power is cut off. However, conventional flash memory devices have lower integration densities and slower operating speeds when compared with conventional DRAMs. [0003] Examples of non-volatile memory devices include Magnetic Random Access Memory (MRAM), Ferroelectric Random Ac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L21/82G11C11/56H10B12/00
CPCH10B63/84H10N70/826H10N70/8833
Inventor 安承彦李明宰金锡必朴永洙
Owner SAMSUNG ELECTRONICS CO LTD