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Solid-state imaging device

A technology of solid-state imaging device and control device, which is applied in the direction of image communication, TV, color TV parts, etc., can solve the problems of increasing leakage current or dark current, etc., so as to prevent the expansion of chip size, suppress the increase, and prevent the pass rate Falling effect

Inactive Publication Date: 2008-12-17
ORMON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the techniques described in Non-Patent Publication 1 and Non-Patent Publication 2, adding components for Image 6 The structure shown is unavoidable
This increases the leakage current or dark current caused by the added component

Method used

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no. 2 approach

[0099] The second embodiment has the following advantages.

[0100] In the second embodiment, for the photoelectric conversion signal obtained by linearly converting the photocurrent Ip in the pixel Ca, when the first transistor T1 serving as a load transistor operates in a strong inversion state, the potential at the detection node N1 is read Take it as a reset signal. Also, an image signal is generated from the difference between the photoelectric conversion signal and the reset signal. Therefore, even if the incident light intensity is low in the photodiode PD, an image signal in which FPN is eliminated is obtained.

[0101] Next, a third embodiment of the present invention will be described with reference to the drawings.

[0102] In the third embodiment, the same components as those in the first and second embodiments are denoted by the same reference numerals.

[0103] refer to Figure 4 , the CDS circuit 16 of the third embodiment includes three SH circuits 31 a , 3...

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Abstract

Fixed pattern noise (FPN) is reduced and area increase of an image cell is suppressed. A photoelectric conversion signal is generated from a photo current flowing in a photodiode (PD) in a pixel (Ca). A first transistor (T1) functioning as a load transistor is driven to operate within a sub-threshold region after being operated in strong inversion status. The potential of a sense node (N1) is read as a reset signal while the first transistor (T1) is operating within the sub-threshold region. Then, an image signal (Vs) is generated by calculating the difference between the photoelectric conversion signal and the reset signal.

Description

technical field [0001] The present invention relates to solid-state imaging devices. Background technique [0002] In the prior art, a MOS type imaging device is used to obtain various image data. Such an imaging device reads charges accumulated in a pn junction capacitor of a photodiode through a MOS type transistor such as a field effect transistor (FET). [0003] In general, the exposure latitude or dynamic range of MOS-type imaging devices is considered to be narrower than that of photographic film. If the exposure time period is narrow, darker parts of the image are recorded as black pixel data, and brighter parts of the image are recorded as white pixel data. [0004] A logarithmic conversion type imaging device widens the dynamic range. Such as Figure 6 As shown, the imaging device includes an image unit formed by a photodiode PD, a load transistor T51, an amplification transistor T52, and a selection transistor T53. The cathode of the photodiode PD is connected ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/335H04N5/217H04N5/355H04N5/357H04N5/365H04N5/374
CPCH04N25/63H04N25/573H04N25/616H04N25/671H04N25/76H04N25/673
Inventor 桥本征史
Owner ORMON CORP
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