Management method of Nand-Flash memory system

A management method and storage system technology, which is applied in the management field of computer Nand-Flash storage systems, can solve the problems of non-sequential page writing, incapable of one-time writing of physical pages, inability of speed and stability to adapt to new Flash devices, etc. Achieve the effects of reducing time delay, ensuring integrity, and reducing search time

Inactive Publication Date: 2008-12-24
常州新超电子科技有限公司
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional single-level cell Flash devices are very different from those based on multi-level cell (MLC) Flash devices in terms of physical interface and internal characteristics. Therefore, the storage management method of the traditional Flash device storage system is no longer comparable to the new type in terms of speed and stability. Flash devices are compatible with
For example, in the prior art, in the management method of the Nand-Flash storage system based on the single-level cell (SLC) Flash device, the technology of forward linked list and page replacement writing is used to realize the logical physical address conversion of the ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Management method of Nand-Flash memory system
  • Management method of Nand-Flash memory system
  • Management method of Nand-Flash memory system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Example 1, see figure 1 , when the system is initialized, the physical block 9 is first searched, and the logical block number represented by it is M, and its forward physical block number is 7. When reading the forward replacement physical block number of the physical block 7, it is found to be HEAD mark, the search for the logical M block chain ends, and the logical M block chain (LBC)-M memory reverse linked list: 9->7 is obtained, and then the logical M block chain (LBC) is constructed according to the memory reverse linked list -M's memory forward linked list: 7->9, and then constitute a complete logical M block chain (LBC) -M's memory double-linked list: 79, such as figure 2 as shown, figure 2 It is a schematic diagram of the memory doubly linked list constructed by the above-mentioned embodiment 1.

Embodiment 2

[0045] Example 2, image 3 A schematic diagram of Embodiment 2 of constructing a memory reverse linked list for the present invention. See image 3 , when the system is initialized, the physical block 4 is first searched, and the logical block number it represents is K, and its forward replacement physical block number is 8, and then the physical block 8 is searched to obtain its forward replacement The physical block number is 5, and when the forward replacement physical block number of 5 is read, it is found to be a HEAD mark, then the search for the logical K block chain ends, and the memory reverse linked list of the logical K block chain (LBC)-K is obtained: 4 ->8->5, and then construct a logical K block chain (LBC)-K memory forward linked list [K] according to the reverse linked list: 5->8->4, and then form a complete logical K block chain ( LBC)-K memory doubly linked list [K]: 584, such as Figure 4 as shown, Figure 4 It is a schematic diagram of the memory doubly...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a management method for a computer Nand-Flash storage system. A plurality of physical blocks form a logic block chain; the information of the block numbers of the physical blocks and the block number of a forward physical block thereof are stored in an extended area of a first physical page of each physical block; when the system is initialized, a bidirectional chain table of the logic block chain is reconstructed by the stored information. When in read operation, the bidirectional chain table is utilized to research forwards and read a target physical block; the number of a read physical page is the same as the number of a logic page. When in write operation, the bidirectional chain table is utilized to research backwards; when a first physical block with the number of used pages on the logic block chain smaller than the number of a logic page requested to write, data is directly written in the logic page requested to write by the physical block; if the numbers of used pages of all physical blocks are larger than the number of the number of the logic page requested to write, a free physical block is added into the logic block chain; the data of effective pages is copied to the new current free physical block, and the data of the current page is written.

Description

technical field [0001] The invention relates to a management method of a computer storage system, in particular to a management method of a computer Nand-Flash (non-volatile flash memory) storage system. Background technique [0002] Nand-Flash storage system is a non-volatile flash memory storage system. Nand-Flash storage system has very fast writing and erasing speed. Its main function is to store data. It is stored in U-disk, digital camera, MP3, MP4, It has been widely used in handheld mobile devices such as mobile phones and GPS receivers. [0003] The traditional Nand-Flash storage system is mainly based on single-layer cell (SLC, that is, Single Layer Cell) Flash device storage system, but with the improvement of Flash device technology in the past two years, not only the original single-layer cell (SLC) Flash The Nand-Flash storage system of the device has changed in access control, and a new type of Nand-Flash storage system based on the Multi-Layer Cell (MLC, Mul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F12/08G06F12/10
Inventor 何咏赵海源
Owner 常州新超电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap