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Conductive plug and preparation method thereof

A technology of conductive plugs and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as gaps, leakage current generation, device failure, etc., and achieve the effect of improving performance and preventing leakage current

Active Publication Date: 2010-11-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing process of manufacturing organic light emitting diodes, when filling the conductive layer in the contact hole, it is easy to generate gaps, and holes will be exposed after planarization, and the holes will cause leakage current and cause the device to fail

Method used

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  • Conductive plug and preparation method thereof
  • Conductive plug and preparation method thereof
  • Conductive plug and preparation method thereof

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Embodiment Construction

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Abstract

The invention relates to a method for manufacturing a conductive plug, which comprises steps as follows: a silicon substrate comprising a metal layer and an insulated layer in sequence is provided; contact holes protruding the metal layer and penetrating the insulated layer are arranged in the insulated layer; a pervasion stopping layer is deposited on the insulated layer and the inner walls of the contact holes; a first conductive layer is formed on the pervasion stopping layer; the first conductive layer is etched-back until the first conductive layer protrudes the pervasion stopping layer outside and inside the contact holes; a second conductive layer is formed on the pervasion stopping layer and the first conductive layer; the second conductive layer and the pervasion stopping layer are flattened until the two layers protrude the insulated layer to form the conductive plug. The invention also provides a conductive plug. As two layers of the conductive layer are filled in the contact holes, holes formed in the first conductive layer are repaired by the second conductive layer for preventing the holes from forming above the contact holes, so as to prevent the generation of leakage current and enhance the performance of semiconductor devices.

Description

Conductive plug and manufacturing method thereof technical field The invention relates to the field of manufacturing semiconductor devices, in particular to a conductive plug in an organic light emitting diode and a manufacturing method thereof. Background technique With the rapid development of ULSI (Ultra Large Scale Integration) technology, miniaturization of wiring design principles of semiconductor devices is progressing. The number of integrated components is increasing, and the wiring of large-scale integrated circuits is more complex. In this case, multi-layer interconnection has attracted attention, and the deposition of tungsten plugs in contact holes is one of the key interconnection technologies. Interconnection technology plays a key role in improving product yield, especially in the fabrication process of organic light emitting diodes. There is an existing method for forming conductive plugs in the manufacturing process of organic light emitting diodes. As ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/522
Inventor 向阳辉刘艳
Owner SEMICON MFG INT (SHANGHAI) CORP