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Lateral bipolar transistor and method of production

A bipolar transistor, horizontal technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as increasing resistance

Active Publication Date: 2012-06-13
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There is also an increased resistance due to the greater distance from surface contact

Method used

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  • Lateral bipolar transistor and method of production
  • Lateral bipolar transistor and method of production
  • Lateral bipolar transistor and method of production

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Embodiment Construction

[0013] figure 1 A cross-section of an embodiment of a lateral bipolar transistor is shown. The transistor structure is located at the surface 10 of the semiconductor body 1 . The buried layer 2 of the first conductivity type can be arranged in a doped well 3 which is also of the first conductivity type but has a lower doping compared to the buried layer 2 . Separate doped regions 4 , 5 of a second conductivity type opposite to the first conductivity type are arranged in the well 3 . The conductive material 6, 7 is arranged in the trench 11 in contact with the doped regions 4, 5, so that one doped region 4 with the corresponding conductive material 6 forms an emitter, and the other doped region 5 with the corresponding conductive material 7 Forms the collector of the lateral bipolar transistor. Between the doped regions 4, 5 there is a doping material of the well 3 of opposite conductivity type. Therefore, there is a pn junction between the doped region and the well.

[00...

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Abstract

The invention relates to tranverse bipolar transistor and manufacture method thereof. Emitter and collector regions of the bipolar transistor are formed by doped regions of the same type of conductivity, which are separated by doped semiconductor material of an opposite type of conductivity, the separate doped regions being arranged at a surface of a semiconductor body and being in electric contact with electrically conductive material that is introduced into trenches at the surface of the semiconductor body.

Description

technical field [0001] The present invention relates to lateral bipolar transistors and methods of manufacturing the same. Background technique [0002] The following description refers to a lateral bipolar transistor having an emitter region, a base region and a collector region arranged at the surface of a semiconductor device. The emitter and collector regions extend vertically into the semiconductor material and are doped to a first type of conductivity. Between the doped emitter and collector regions there is an oppositely doped base region at the surface. The base region forms a pn junction with both the emitter and collector regions. Electrical contacts of the emitter, collector and base may be arranged on the upper surface of the semiconductor device. [0003] In automotive applications, for example, bipolar transistors can be used to control voltages. Here, pnp transistors have significant advantages. Bipolar transistors can also be used as switches. In an H-b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/735H01L29/08H01L21/331
CPCH01L29/0808H01L29/735H01L29/0821
Inventor M·斯特彻
Owner INFINEON TECH AG
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