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Ultra-wideband near-infrared luminous transparent glass-ceramic

A glass-ceramic and near-infrared technology, which is applied in the field of ultra-broadband near-infrared luminescent transparent glass-ceramics, can solve the problems of not being able to realize ultra-broadband luminescence, and achieve the effect of easy processing and wide infrared bandwidth

Inactive Publication Date: 2009-01-28
ZHEJIANG UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

All the studies mentioned above revolve around Ni containing only a single crystal phase 2+ Doping the glass-ceramic material, so the bandwidth of infrared luminescence of the above-mentioned glass-ceramic material is close to that of the single crystal material doped with transition metal ions, and the ultra-broadband luminescence cannot be realized.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] to Cr 4+ Ion doped containing Li 2 Silicate glasses of O, MgO and ZnO undergo heat treatment to in situ precipitate Li 2 MgSiO 4 (average size: 20nm) and Zn 2 SiO 4 (average size: 20nm) microcrystalline, Cr 4+ The ion doping concentration is 0.01 mol%. Cr 4+ ions in Li 2 MgSiO 4 and Zn 2 SiO 4 The luminescence peaks in the microcrystal are respectively located at 1200nm (200nm FWHM) and 1350nm (200nm FWHM). Through the combination of the two luminescence peaks, infrared ultra-broadband luminescence with a FWHM of 350nm is obtained.

Embodiment 2

[0017] to V 3+ Ion-doped containing ZnO, Ga 2 o 3 and Al 2 o 3 The borate glass is heat-treated to precipitate Ga in situ 2 o 3 (average size: 5nm) and ZnAl 2 o 4 (average size: 30nm) microcrystalline, V 3+ The ion doping concentration was 0.1 mol%. V 3+ ions in Ga 2 o 3 and ZnAl 2 o 4 The luminescence peaks in the microcrystals are respectively located at 1200nm (200nm FWHM) and 1300nm (200nm FWHM). Through the combination of the two luminescence peaks, infrared ultra-broadband luminescence with a FWHM of 300nm is obtained.

Embodiment 3

[0019] to Mn 6+ Ion doped containing Li 2 O, Ga 2 o 3 and Al 2 o 3 The phosphate glass is heat treated to precipitate LiGa in situ 5 o 8 (average size: 3nm) and LiAlSiO 4 (average size: 800nm) microcrystalline, Mn 6+ The ion doping concentration was 1 mol%. mn 6+ ions in LiGa 5 o 8 and LiAlSiO 4 The luminescence peaks in the microcrystal are respectively located at 1250nm (200nm FWHM) and 1300nm (200nm FWHM). Through the combination of the two luminescence peaks, infrared ultra-broadband luminescence with a FWHM of 250nm is obtained.

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Abstract

The ultra wideband near infrared luminescent transparent microcrystalline glass disclosed by the invention is the glass that the glass in which transition metal ions are doped contains two or more than two kinds of 1-1,000 nano-microcrystal, and the doping concentration of the transition metal ions is 0.01-5 mol%. Compared with rare-earth ions and crystal material in which transition metal ions is doped, the ultra wideband near infrared luminescent transparent microcrystalline glass of the invention is characterized in that the processing is easy; compared with the rare-earth ions and microcrystalline glass material doping transition metal ions and only containing a single crystal phase, the ultra wideband near infrared luminescent transparent microcrystalline glass has wider infrared bandwidth. The glass of the invention can be used in ultra wideband infrared light sources, ultra wideband fibre amplifiers and tunable lasers.

Description

technical field [0001] The invention relates to a transparent glass-ceramic, in particular to an ultra-broadband near-infrared luminescent transparent glass-ceramic. Background technique [0002] Bandwidth is an important parameter of gain media for broadband fiber amplifiers and ultrashort pulse lasers. For a long time, people have been looking for ways to increase the bandwidth of near-infrared luminescent gain media. In the glass medium doped with rare earth ions, the purpose of increasing the bandwidth can be achieved by adjusting the composition of the medium and co-doping a variety of rare earth ions. However, since the 4f-4f electronic transition process of rare earth ions is carried out under the shielding effect of outer electrons, the corresponding luminous bandwidth is greatly limited. Using the Raman effect is another way to increase bandwidth. Theoretically, as long as there is a suitable pump source, laser light in any band can be obtained. Nevertheless, the...

Claims

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Application Information

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IPC IPC(8): C03C10/12C03C4/12
Inventor 周时凤邱建荣朱斌杨护成
Owner ZHEJIANG UNIV
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