Metal gallium longitudinal temperature gradient solidification purification apparatus and method

A temperature gradient and purification method technology, applied in the field of metal gallium longitudinal temperature gradient solidification and purification equipment, can solve the problems of high production cost, restrictions on the application of high-purity metal gallium materials, production difficulties, etc., and achieve convenient purification and quantitative control, reduce Production cost and the effect of improving production efficiency

Inactive Publication Date: 2009-04-22
NANJING JINMEI GALLIUM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the prior art, traditional processes such as chemical extraction and electrolysis are generally used for the refining and purification of gallium metal. Due to the limitation of process level and cost, the purity of the finished gallium produced is generally only 4N, resulting in the production of high-purity gallium metal such as 6N and 7N. It is very difficult, and the production cost remains high, which seriously restricts the application of high-purity gallium metal materials

Method used

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  • Metal gallium longitudinal temperature gradient solidification purification apparatus and method

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Embodiment 1

[0015] Embodiment 1: as figure 1 As shown, a vertical temperature gradient solidification and purification device for gallium metal includes three parts: a growth zone 3, a shoulder zone 5, and a seed crystal zone 1. The growth zone 3 is a cylindrical tube, and the shoulder zone 5 is An inverted truncated cone tube connected to the lower end of the growth area 3 , and the seed crystal area 1 is a cylindrical dead tube connected to the lower end of the shoulder area 5 . The seed crystal area 1 is provided with a cooling device, and the cooling device is a cold plate 8 containing a cooling liquid 7 . The purification device is made of non-polar plastic Nylon. The tube wall of the growth zone 3 is provided with a scale line 4 .

[0016] A method for solidifying and purifying metallic gallium with a longitudinal temperature gradient, comprising the following steps: placing metallic gallium seed crystal 6 into the seed crystal region 1; injecting liquid metal gallium 2 into the p...

Embodiment 2

[0017] Embodiment 2: It differs from Embodiment 1 in that the purification device is made of non-polar plastic, the plastic is PE, and the temperature of the liquid gallium metal is 37°C. The cooling temperature of the seed crystal region is 3°C.

Embodiment 3

[0018] Embodiment 3: It differs from Embodiment 1 in that the purification device is made of non-polar plastic Teflon, and the temperature of the liquid gallium metal is 40°C. The cooling temperature of the seed crystal region is 5°C.

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Abstract

The invention discloses a longitudinal temperature gradient solidification-purification method and a device for metallic gallium. The device comprises three parts, namely a growth zone, a shouldering zone and a seed crystal zone, wherein the growth zone is a segment of cylindrical pipe barrel; the shouldering zone is an inverse frustum pipe barrel connected with the lower end of the growth zone; and the seed crystal zone is a cylindrical blind pipe connected with the lower end of the shouldering zone. The method comprises the following steps of putting metallic gallium seed crystal into the seed crystal zone, injecting liquid metallic gallium into the purification device and cooling the seed crystal zone. The method purifies the metallic gallium further to the extremely high purity of 6N or 7N on the basis of 4N. The invention has the advantages that the device is simple in mechanism; the method is convenient to operate; and purification quantification is convenient to control.

Description

technical field [0001] The invention relates to a purification device and method, in particular to a metal gallium longitudinal temperature gradient solidification purification device and method. Background technique [0002] When a substance is partially solidified from a liquid state to a solid state, the impurity concentration in the solid state is often lower than that in the liquid state due to the different solubility of impurities in its liquid state and solid state. This phenomenon is called segregation. This phenomenon can be used to purify the substance, but the weight of the solidified solid phase is not easy to control with the naked eye, and because gallium has a low melting point, which is similar to normal temperature, the change of ambient temperature has a greater impact on the crystallization speed. , Quantitative operation is more difficult during production. At present, there is no device and method for quantitatively purifying gallium metal by using seg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B58/00
Inventor 范家骅
Owner NANJING JINMEI GALLIUM
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