Methods to obtain low k dielectric barrier with superior etch resistivity

一种电介质阻挡、电介质层的技术，应用在涂层、电路、电气元件等方向，能够解决蚀刻选择性和阻挡性能损失等问题

Inactive Publication Date: 2009-04-29
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional methods of introducing voids into barrier layers generally result in loss of etch selectivity and barrier properties

Method used

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  • Methods to obtain low k dielectric barrier with superior etch resistivity
  • Methods to obtain low k dielectric barrier with superior etch resistivity
  • Methods to obtain low k dielectric barrier with superior etch resistivity

Examples

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example 1

[0083] The PECVD deposition process used to deposit porous dielectric layers comprising silicon carbide uses compounds including trimethylsilane (TMS, (CH 3 ) 3 SiH) and ethylene (C 2 h 4 ) precursors of the composition. A carrier gas, such as helium, argon, nitrogen, or combinations thereof, is introduced into the processing chamber along with the precursors.

[0084] The ratio of TMS and ethylene is set such that the atomic ratio of carbon in the mixture is greater than 15%. In one embodiment, the ratio of ethylene to TMS is between about 0.5:1 and about 8:1. In another embodiment, the ratio of ethylene to TMS is between about 1:1 and about 4:1. The processing parameters are as follows:

[0085] Flow rate (including precursor and carrier gas): between about 5 seem and about 10,000 seem, wherein the flow rate of carrier gas can be between about 5 seem and about 10,000 seem.

[0086] Pitch: from about 200 mils to about 2000 mils;

[0087] Temperature: between about 100...

example 2

[0091] The PECVD deposition process used to deposit porous dielectric layers comprising silicon carbide uses compounds including trimethylsilane (TMS, (CH 3 ) 3 SiH), ethylene (C 2 h 4 ) and ammonia (NH 3 ) precursors of the composition. In one embodiment, the ratio of ethylene to TMS is between about 3:1 and about 5:1. The ratio of ammonia to TMS can be between about 1:10 to about 10:1. In another embodiment, the ratio of ammonia to TMS may be between about 1:4 and about 3:1. The processing parameters are as follows:

[0092] Flow rate (including precursor and carrier gas): between about 5 sccm and about 10,000 sccm, wherein the flow rate of the carrier gas can be between about 5 sccm and about 10,000 sccm.

[0093] Spacing: from about 200mm to about 2000mm;

[0094] Temperature: between about 100°C and about 550°C, or between about 200°C and about 350°C;

[0095] Chamber pressure: between about 10mTorr and one atmosphere;

[0096] RF Power: From about 15W to about ...

example 3

[0098] The PECVD deposition process used to deposit porous dielectric layers comprising silicon carbide uses compounds including trimethylsilane (TMS, (CH 3 ) 3 SiH) and ethylene (C 2 h 4 ) precursors of the composition. The processing conditions, including the ratio of TMS and ethylene, are set such that the atomic ratio of carbon is greater than 15%. In one embodiment, the ratio of ethylene to TMS is from about 1:1 to about 8:1, the flow rate of TMS / Northern precursor and carrier gas is from about 5 sccm to about 10,000 sccm, and the temperature is about 350°C. For these conditions, the chamber pressure is between about 10 mTorr and one atmosphere, the radio frequency (RF) power used to generate the plasma is between about 15 W and about 3,000 W, and the substrate set for supplying the precursors to the substrate being processed is The spacing between the base and the spray tip is from about 200 mils to about 2000 mils.

[0099] Advantages of barrier layers

[0100] Th...

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Abstract

The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.

Description

technical field [0001] Embodiments of the invention generally relate to the fabrication of integrated circuits. In particular, embodiments of the present invention relate to a method of forming a dielectric barrier film used in manufacturing a semiconductor device. Background technique [0002] The shape of integrated circuit devices has decreased dramatically in size since they first appeared decades ago. Since then, integrated circuits generally follow a two year / half-size law (commonly known as Moore's Law), which means that the number of devices on a chip doubles every two years. Today's fabrication plants are routinely producing devices with 0.1 μm feature sizes, and the factories of the near future will be producing devices with even smaller features. [0003] Continuous scaling in device shape has required dies with low dielectric constant (k) values ​​because the capacitive connections between adjacent metal lines must shrink to further shrink the size of devices o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/768C23C16/22
CPCC23C16/505H01L21/3121H01L21/3185C23C16/22H01L21/3148H01L21/0217H01L21/02167H01L21/02274H01L21/02205H01L21/02203H01L21/02211H01L21/31H01L21/02112
Inventor 许惠雯刘宜君夏立群德里克·R·维迪伊沙姆·迈’萨德
Owner APPLIED MATERIALS INC
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