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Electrostatic chuck

An electrostatic chuck and air hole technology, which is used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve problems such as uneven distribution of helium, and achieve uniform distribution and uniform temperature control.

Inactive Publication Date: 2009-04-29
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The above prior art has at least the following disadvantages: the distribution of helium between the wafer and the electrostatic chuck is very uneven, and the helium cannot be fully utilized to implement uniform temperature control on the wafer

Method used

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Examples

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specific Embodiment 1

[0022] Specific embodiment one, such as image 3 As shown, a plurality of helium holes 6 are distributed on the insulating layer 5 along multiple circles with the center of the insulating layer 5 as the center.

[0023] Among the multiple rings of helium holes 6 , the distribution density of the outermost ring of helium holes 6 along the circumference is greater than or equal to the distribution density of the other rings of helium holes 6 along the circumference. It can be 1-2 times of the distribution density of other circles of helium holes 6 along the circumference.

specific Embodiment 2

[0024] Specific embodiment two, such as Figure 4 As shown, a plurality of helium holes 6 are evenly distributed on the insulating layer 5 . It can be distributed in a honeycomb shape on the insulating layer 5 . Matrix distribution or other uniform distribution methods can also be used.

specific Embodiment 3

[0025] Specific embodiment three, such as Figure 5 As shown, the helium gas distribution channel 7 may include a region, specifically connecting multiple turns of the helium gas channel 7 to form a whole.

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Abstract

The invention discloses an electrostatic chuck. The electrostatic chuck comprises a base, an insulating layer which is arranged above the base, a plurality of helium gas distribution channels are arranged on the base, and the insulating layer is provided with a plurality of helium gas distribution channels which are communicated with a plurality of helium gas holes which are arranged on the insulating layer; and a plurality of the helium gas holes are in loopy circumferential distribution on the insulating layer with the center of the insulating layer as the center of circle or in even honeycomb distribution on the insulating layer, which promotes the helium gas to fully and evenly contact the chip and the electrostatic chuck, increases the heat conduction performance of the electrostatic chuck to the chip, and fully achieves the temperature uniformity requirement of the chip. A plurality of helium gas holes can adopt a double-area helium gas system or a multi-area helium gas system which respectively controls the temperature of the chip center and the chip edge or performs multi-area control on the chip temperature.

Description

technical field [0001] The invention relates to a semiconductor processing equipment, in particular to an electrostatic chuck in the semiconductor processing equipment. Background technique [0002] Electrostatic chuck (ESC for short) is widely used in integrated circuit (IC) manufacturing process, especially plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD) and other processes. Fixing, supporting and transporting the wafer (Wafer) in the reaction chamber; providing DC bias for the wafer and controlling the temperature of the wafer surface. [0003] In the semiconductor process, the plasma etching process is very sensitive to temperature, and the temperature control is very strict, requiring precise temperature control (±1°C), and the temperature uniformity directly affects the etching uniformity. An important function of the electrostatic chuck is to control the temperature on the wafer. The specific method is to control the static ele...

Claims

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Application Information

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IPC IPC(8): H01L21/683
Inventor 彭宇霖
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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