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Method for calibrating position of manipulator on film deposition machine station according to silicon nitride film stress

A film stress and film deposition technology, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve problems such as difficulty in controlling film stress and adverse effects on subsequent processes.

Active Publication Date: 2009-05-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the problem that the abnormality of the manipulator introduced in the background technology makes it difficult to control the film stress in the film deposition process and bring adverse effects on the subsequent process, the present invention is proposed

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  • Method for calibrating position of manipulator on film deposition machine station according to silicon nitride film stress
  • Method for calibrating position of manipulator on film deposition machine station according to silicon nitride film stress
  • Method for calibrating position of manipulator on film deposition machine station according to silicon nitride film stress

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Embodiment Construction

[0023] One of the preferred embodiments of the present invention is described in detail below to describe the concept of the present invention and to show the more important inventive features of the present invention,

[0024] The operating environment of this embodiment is the Producer machine that AMAT Company produces, those skilled in the art should understand that the method of the present invention is mainly designed for the Producer machine of AMAT Company, and this machine is assisted by plasma (plasma enhance ) to form a thin film instead of heat alone, so the film forming time of the producer machine is very short and the production efficiency is high. Most of the dielectric film layers such as silicon nitride, silicon oxide, silicon rich oxide (silicon rich oxide), silicon oxynitride, etc. can be produced by this machine. The method of the present invention is generally applicable to such a machine, and those skilled in the art should understand that the applicable...

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Abstract

The invention provides a method for calibrating the position of a manipulator in a thin film deposition machine according to the thin film stress. As the thin film stress has sensitive response to the state of the manipulator, the method adopts the thin film stress repeatability and reproducibility data of the thin film as a check standard for the thin film deposition machine to calibrate the manipulator. Especially in the situation that other parameters related to the thin film stress all do not respond to the unstable thin film stress, the method can be used for controlling the thin film stress within a stable range.

Description

technical field [0001] The invention relates to a thin film deposition process in the integrated circuit manufacturing process, in particular to a method for controlling the stress of the thin film within a stable range. Background technique [0002] In the integrated circuit manufacturing process, film deposition is a common technology, usually on the silicon wafer substrate by physical vapor deposition (PVD), chemical vapor deposition (CVD) and other deposition methods to form a structure with multiple layers of different materials on the silicon substrate In this process, photolithography, etching and other processes are also combined to make each layer of film have a certain pattern structure, and finally form a complete semiconductor device. Commonly used above-mentioned film materials are silicon nitride (Si 2 N 3 ), silicon dioxide (SiO 2 ), metal aluminum, tungsten, etc. [0003] Film stress is a key parameter of the film material and should be controlled within ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/16C30B29/38
Inventor 汪丽燕张苗王科万兴王辉炎吴秉寰陈进财
Owner SEMICON MFG INT (SHANGHAI) CORP