Wet method corrosion process for silicon nitride film

A silicon nitride film, wet etching technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of silicon oxide particle precipitation, low processing output efficiency, etc. The effect of silicon particle precipitation

Active Publication Date: 2009-06-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0007] The technical problem to be solved by the present invention is to provide a silicon nitride film wet etching process, which not o

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  • Wet method corrosion process for silicon nitride film
  • Wet method corrosion process for silicon nitride film
  • Wet method corrosion process for silicon nitride film

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0020] The present invention changes the original single phosphoric acid tank to corrode (as figure 1 shown) or two consecutive phosphoric acid tanks for stepwise corrosion (such as figure 2 Shown) method, in the middle of two consecutive phosphoric acid tanks for step-by-step corrosion, add a high-temperature water washing tank for cleaning steps, such as image 3 Shown, a kind of silicon nitride film wet etching process method of the present invention comprises the following steps:

[0021] The first step: enter the first phosphoric acid tank with a concentration of 70%-90% for etching, the etching process is to completely etch the silicon nitride film (that is, complete etching, using wet etching, in phosphoric acid solution The etching mechanism of the silicon nitride film is to etch the silicon nitride film with water, in which phospho...

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Abstract

The invention discloses a silicon nitride film wet-method corrosion process method. The method comprises the following steps: 1, carrying out full corrosion on a silicon nitride film by using a single phosphoric acid tank; 2, cleaning the silicon nitride film by using a high-temperature rinsing tank; 3, carrying out over-etching by using the single phosphoric acid tank; and 4, cleaning the silicon nitride film by using the high-temperature rinsing tank. The method can solve the problem of low processing and yielding efficiency of equipment and can also solve the problem of precipitation of monox particles.

Description

technical field [0001] The invention relates to a process method for manufacturing a semiconductor device, in particular to a silicon nitride film wet etching process method. Background technique [0002] At present, there are two main wet etching methods for silicon nitride film used in the semiconductor manufacturing process. The silicon nitride film is completely etched in a single phosphoric acid tank and cleaned with a single high-temperature water washing tank after over-etching, or continuous 2 The silicon nitride film is etched step by step in two phosphoric acid tanks (single tank for silicon nitride film etching, single tank for over-etching), and then a single high-temperature water washing tank is used for cleaning. [0003] The above two currently used process methods have their own disadvantages: [0004] The first processing method is as figure 1 As shown, the first step: enter a single phosphoric acid tank with a concentration of 70%-90% for etching (the et...

Claims

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Application Information

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IPC IPC(8): H01L21/3105H01L21/311
Inventor 王明琪赵桓赵晓亮潘嘉
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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