Wet method corrosion process for silicon nitride film

A silicon nitride film, wet etching technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of silicon oxide particle precipitation, low processing output efficiency, etc. The effect of silicon particle precipitation
CN101452845AActive Publication Date: 2009-06-10SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2009-06-10

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Abstract

The invention discloses a silicon nitride film wet-method corrosion process method. The method comprises the following steps: 1, carrying out full corrosion on a silicon nitride film by using a single phosphoric acid tank; 2, cleaning the silicon nitride film by using a high-temperature rinsing tank; 3, carrying out over-etching by using the single phosphoric acid tank; and 4, cleaning the silicon nitride film by using the high-temperature rinsing tank. The method can solve the problem of low processing and yielding efficiency of equipment and can also solve the problem of precipitation of monox particles.
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Description

technical field

[0001] The invention relates to a process method for manufacturing a semiconductor device, in particular to a silicon nitride film wet etching process method. Background technique

[0002] At present, there are two main wet etching methods for silicon nitride film used in the semiconductor manufacturing process. The silicon nitride film is completely etched in a single phosphoric acid tank and cleaned with a single high-temperature water washing tank after over-etching, or continuous 2 The silicon nitride film is etched step by step in two phosphoric acid tanks (single tank for silicon nitride film etching, single tank for over-etching), and then a single high-temperature water washing tank is used for cleaning.

[0003] The above two currently used process methods have their own disadvantages:

[0004] The first processing method is as figure 1 As shown, the first step: enter a single phosphoric acid tank with a concentration of 70%-90% for etching (the et...

Claims

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