Optical close range correction, photo mask production and graphic method
An optical short-distance and reticle technology, which is applied in the photoplate process of optics and patterned surfaces, and originals for photomechanical processing, etc., can solve the problem of large differences in critical dimensions, inconsistent layout circuit graphics density, and impact on semiconductors. Problems such as device imaging quality, to achieve the effect of improving imaging quality
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[0033] According to the density of semiconductor devices on the wafer, it can be divided into device-dense area, device semi-dense area and device isolated area. The distance between circuit patterns in the device-dense area is equal to 1CD, and the distance between circuit patterns in the device semi-dense area is greater than 1CD and less than Equal to 3CD, the distance between the circuit patterns in the isolated area of the device is greater than 3CD.
[0034] Forming the circuit pattern on the photoresist layer of the wafer is to use the photomask plate manufacturing equipment to transfer the designed layout circuit pattern to the photomask plate, and then use the exposure device to transfer the reticle circuit pattern on the photomask plate onto the photoresist layer of the wafer. Therefore, adding layout auxiliary patterns around the layout circuit patterns can reduce the CD variation of the circuit patterns formed on the photoresist layer of the wafer.
[0035]In th...
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