Method for cleaning wafer surface pollutant particle in CMP process

Abstract

Disclosed is a method for clearing pollutant particles on surfaces of a wafer in the CMP technique, the steps of the method comprise leading polishing solution in a chemical mechanical polishing device to perform chemical mechanical polishing on the wafer, stopping leading in the polishing solution, putting acidulous or alkalescent organic substances of which acidity or alkaline is identical to the polishing solution in the chemical mechanical polishing device, and then cleaning the wafer. The method can efficiently remove large-size pollutant particles on the surfaces of the wafer which can not be cleaned after mechanically polishing the wafer in the prior art.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for removing pollutant particles on the wafer surface in a CMP process. Background technique [0002] With the continuous development of the semiconductor industry, the semiconductor manufacturing process has entered the nanometer era. In order to adapt to the trend of smaller and smaller electronic products and stronger functions, the line width in the semiconductor manufacturing process has also been developed from the original 0.18 micron to the present. 0.13 micron or even 90nm process. Along with the trend of chip functions becoming stronger and stronger, and components becoming smaller and smaller, the quality requirements for the surface of semiconductor wafers are also getting higher and higher, and the surface of the wafer is required to be flat and smooth, free of pollutant particles clean surface. The pollutant particles refer to various ...

AI Technical Summary

Problems solved by technology

[0007] After using the chemical mechanical polishing method of the prior art to polish the control sheet and the dummy sheet and cleaning the control sheet and the dummy sheet with the cleaning method of the prior art, it was found that the surface size of the control sheet and the dummy sheet was larger than 0.16um. The number is still relatively large, usually greater than 100. The surface cleanliness of this cleanliness control sheet and virtual sheet is too different from the cleanliness of the online wafer surface, which cannot accurately display the actual working status of the machine. When the device size is getting smaller and smaller and the process requirements are getting stricter, it is not allowed

Images