Gas dispensing device and semiconductor process plant employing the same

Abstract

The invention discloses a gas distribution device, comprising a supporting board, a spoiler and a spray header electrode, which are arranged in sequence in an overlapping way from top to bottom. An intake channel is arranged on the supporting board and an exhaust channel is arranged on the spray header electrode, wherein, at least one surface of the spoiler is provided with a spoiler concave part which is also provided with a through-hole for vertically running through the spoiler so as to lead the gas of the intake channel on the supporting board to be dispersed at the spoiler concave part, then transmitted to the spray header electrode by the through-hole, and later transmitted to a reaction cavity by the exhaust channel on the spray header electrode. In addition, the invention also discloses semiconductor processing equipment which uses the gas distribution device. The gas distribution device and the semiconductor processing equipment can distribute the gas such as process gas and the like to the inside of the reaction cavity uniformly, thus obtaining uniform distribution of the plasma and further even processing / dealing results.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a gas distribution device and semiconductor processing equipment using the gas distribution device. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. Currently, plasma etching techniques are widely used in the processing / handling of semiconductor devices. The so-called plasma etching technology refers to the ionization of the process gas under the excitation of radio frequency power to form a plasma containing a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. Various physical and chemical reactions occur on the surface of an object (for example, a wafer) ...

AI Technical Summary

Problems solved by technology

[0015] Although the gas distribution device provided by prior art 1 can distribute gases such as process gases to enter the reaction chamber, in practical applications, it inevitably has defects such as uneven gas distribution.

This is because: the gas distribution device provided by prior art 1 has uneven gas distribution at the two inlet passages on the support plate, and the distance between the support plate and the choke assembly is relatively small, so that a gas flow is formed between the two. The height of the gas distribution chamber is also small, so that the gas entering the reaction chamber through the above two inlet channels has no time to diffuse evenly in the gas distribution chamber between the support plate and the choke assembly before entering the lower baffle Or the shower head electrode, so that the process gas that finally enters the reaction chamber through the shower head electrode is unevenly distributed, which leads to uneven distribution of the generated plasma, and finally affects the uniformity of etching and other processing / treatment sex

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