Semiconductor devices and methods of fabricating the same

Abstract

Provided are semiconductor devices and methods of fabricating the same, and more specifically, semiconductor devices having a W-Ni alloy thin layer that has a low resistance, and methods of fabricating the same. The semiconductor devices include the W-Ni alloy thin layer. The weight of Ni in the W-Ni alloy thin layer may be in a range from approximately 0.01 to approximately 5.0 wt % of the totalweight of the W-Ni alloy thin layer.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device including a thin layer of a tungsten alloy having low resistance and a method of manufacturing the same. Background technique [0002] figure 1 is a graph showing gate line resistance as a function of design rule reduction. [0003] refer to figure 1 , the horizontal axis represents the line width (nm) of the gate line, and the vertical axis represents the resistance (Ω) of the gate line. [0004] When the line width of the gate line decreases, the resistance of the gate line increases rapidly. Therefore, in order to reduce the resistance of the gate line which is rapidly increasing due to the increase in integration density and the decrease in design rules in semiconductor devices, it is necessary to reduce the resistivity of the material used to form the gate line. [0005] Generally, polysilicon, which ...

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Problems solved by technology

However, if the tungsten directly contacts the gate oxide layer, the heavy tungsten atoms can damage the surface of the gate oxide layer when the tungsten atoms are deposited, or there is a gap between the tungsten and the gate oxide layer during the subsequent process. WO x risks of

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