Nitride semiconductor device and method of manufacturing same
A technology of nitride semiconductor and aluminum nitride, which is applied in the direction of semiconductor devices, semiconductor lasers, laser components, etc., can solve the problems of low reliability and achieve the effect of improving reliability
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no. 1 approach
[0053] figure 1 is a cross-sectional view schematically showing a preferred example of the nitride semiconductor laser in this embodiment. Here, the nitride semiconductor laser 100 in this embodiment is configured to include: a buffer layer 102 made of n-type GaN with a thickness of 0.2 μm, made of n-type Al 0.06 Ga 0.94 An n-type cladding layer 103 made of N with a thickness of 2.3 μm, an n-type guide layer cladding layer 104 made of n-type GaN with a thickness of 0.02 μm, a multi-quantum cladding layer made of 4 nm thick InGaN and 8 nm thick GaN The well active layer 105 is made of p-type Al 0.3 Ga 0.7 A p-type current blocking layer 106 made of N with a thickness of 20nm, made of p-type Al 0.05 Ga 0.95 A p-type cladding layer 107 made of N with a thickness of 0.5 μm, and a p-type contact layer 108 made of p-type GaN with a thickness of 0.1 μm are stacked in this order from the semiconductor substrate 101 by epitaxial growth. on a semiconductor substrate 101 made of n-...
no. 2 approach
[0087] The nitride semiconductor laser in this embodiment has a configuration similar to that of the nitride semiconductor laser in the first embodiment except that the configuration of the film formed on the facet 113 on the light emitting side is changed, and in The configuration of the film formed on the facet 116 on the light reflecting side.
[0088] In the nitride semiconductor laser of the present embodiment, a coating film 114 made of aluminum nitride with a thickness of 20 nm is formed on the facet 113 on the light emitting side, and an aluminum oxide film 115 with a thickness of 200 nm is formed on the coating film 114 .
[0089] An aluminum nitride film with a thickness of 12 nm is formed on the facet 116 on the light reflection side, an aluminum oxide film with a thickness of 80 nm is formed on the aluminum nitride film, and a high reflection is formed on the aluminum oxide film by the following method Film: Four pairs of a silicon oxide film with a thickness of 8...
no. 3 approach
[0093] The nitride semiconductor laser in this embodiment has a configuration similar to that of the nitride semiconductor laser in the first embodiment except that the configuration of the film formed on the facet 113 on the light emitting side is changed, and in The configuration of the film formed on the facet 116 on the light reflecting side.
[0094] In the nitride semiconductor laser of this embodiment, a coating film 114 with a thickness of 40 nm is formed on the facet 113 on the light emitting side, and the coating film 114 is composed of the structural formula Al 0.33 o 0.11 N 0.56 made of aluminum oxynitride, and an aluminum oxide film 115 with a thickness of 240 nm is formed on the coating film 114 .
[0095] An aluminum nitride film with a thickness of 12 nm is formed on the facet 116 on the light reflection side, an aluminum oxide film with a thickness of 80 nm is formed on the aluminum nitride film, and a high reflection is formed on the aluminum oxide film by ...
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Abstract
Description
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