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Semifinished products with a structured sinter-active surface and a process for their production

A technology of active surface, sintering method, applied in the field of manufacture and application

Active Publication Date: 2012-12-26
钽铌欧碧盛创新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the deposition process is more tedious

Method used

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  • Semifinished products with a structured sinter-active surface and a process for their production
  • Semifinished products with a structured sinter-active surface and a process for their production
  • Semifinished products with a structured sinter-active surface and a process for their production

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] Ta flakes (1 cm x 1 cm) were galvanostatically formed in 0.1% phosphoric acid at 150 V at 85° C. and potentiostatically formed for another 2 hours. An oxide layer with a thickness of about 300 nm was formed on the wafer. The formed sheet was washed with FD water and dried. The product was then reduced as described above.

[0074] In the following figure 1The structured surface can be seen in the scanning electron micrograph of . Subsequent anodization of the sheet at 20 volts yielded a capacitance of 3.45 microfarads, which corresponds to a microscopic surface of 51 square centimeters. Without the structured surface, the capacitance of the flakes is below the detection limit of 500 nanofarads.

Embodiment 2

[0076] At 85° C., a Ta sheet (1 cm×1 cm) was formed by a constant current method at 400 volts in 0.1% phosphoric acid, and then anodized by a constant potential method for 2 hours. An oxide layer with a thickness of about 800 nm was formed on the wafer. The formed sheet was washed with FD water and dried. The product was then reduced as described above.

[0077] The sheet was subsequently formed at 20 volts, yielding a capacitance of 5.52 microfarads, which corresponds to a microscopic surface of 81.7 square centimeters. Without the structured surface, the sheet has a capacitance of less than 500 nanofarads.

[0078] figure 2 and image 3 The scanning electron micrographs in Figure 2 show plan and cross-sectional views (micrographs) of the structured surface.

Embodiment 3

[0080] Ta wires (diameter: 0.49 mm) were formed in 0.1% phosphoric acid at 400 volts at 85° C. by galvanostatic method and further by potentiostatic method for 2 hours. An oxide layer with a thickness of about 800 nanometers is formed on the wire. The formed thread was washed with FD water and dried. The product was then reduced as described above.

[0081] Scanning electron micrographs (see Figure 4 ) shows the plan view of the structured surface.

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Abstract

The invention comprises semifinished products with a structured surface, the semifinished product comprising an oxidized and subsequently re-reduced surface containing at least one refractory metal, and also a process for their production and their use for producing high-capacitance components.

Description

field of invention [0001] The invention relates to semi-finished products, such as wires or sheets of refractory metals having a structured sinter-active surface, to semi-finished products at least partially having such a surface, and to their production and use. Background of the invention [0002] Capacitors are important components in electrical engineering. Especially with the increasing number of portable devices and rapidly developing computer technology, these components must meet higher requirements. For mobile applications, the overall dimensions of these components are becoming smaller and smaller, while electrical parameters such as specifically capacitance and dielectric strength remain constant. The ever-shrinking cycle times of processors (CPUs) also require corresponding advancements in these components, with lower resistance (equivalent series resistance (ESR)) or inductance (ESL). This posed great challenges to the materials and techniques used. [0003] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/048H01G9/052
CPCH01G9/042H01G9/052Y10T428/31Y10T428/264Y10T428/265H01G9/048
Inventor M·斯坦佐A·沙夫H·哈斯H·布鲁姆T·朗格特普C·施尼特
Owner 钽铌欧碧盛创新材料有限公司