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Nonvolatile memory system, and data read/write method for nonvolatile memory system

A memory system, non-volatile technology, applied in non-volatile memory systems and data read/write fields for non-volatile memory systems, capable of solving problems such as slow read/write speed

Inactive Publication Date: 2011-11-23
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it is possible to expand the effective cell range (physical page length) for simultaneously performing read / write between the cell array and the page buffer to basically realize fast read / write, compared with the NOR type, each Cell read / write is slower

Method used

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  • Nonvolatile memory system, and data read/write method for nonvolatile memory system
  • Nonvolatile memory system, and data read/write method for nonvolatile memory system
  • Nonvolatile memory system, and data read/write method for nonvolatile memory system

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Embodiment Construction

[0143] Embodiments of the present invention will now be described with reference to the accompanying drawings.

[0144] [Memory System Overview]

[0145] The nonvolatile memory system of the present embodiment is configured with a memory module including one or more NAND type flash memories, and a memory controller operable to perform read / write control of the memories. All mounted flash memories can be controlled by a single memory controller as a logical memory, which is hereinafter referred to as Logical Block Address (Logical Block Address) NAND flash memory (abbreviated as LBA-NAND memory hereinafter).

[0146] The LBA-NAND memory has multiple data areas (logical block access areas) that can be changed according to commands. Specifically, this embodiment includes the following three data areas, which are divided based on data usage and reliability.

[0147] (1) The program area "vendor application firmware area" for vendor applications, hereinafter referred to as "VFA" ...

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Abstract

A nonvolatile memory system comprises a nonvolatile memory having a plurality of data areas; and a memory controller operative to control read and write operations to the nonvolatile memory. The memory controller successively executes read / write operations to plural sectors within a selected data area in the nonvolatile memory in accordance with a command and a sector count and sector address fedfrom a host device.

Description

technical field [0001] The present invention relates to a nonvolatile memory system and a data read / write method of the nonvolatile memory system, the memory system including a nonvolatile memory and a memory controller operable to perform read / write control of the memory . Background technique [0002] A NAND type flash memory is known as a type of electrically erasable programmable nonvolatile semiconductor memory (EEPROM). Compared with the NOR type, the unit cell area of ​​the NAND type flash memory is smaller, and it is easy to realize large-capacity storage. Although it is possible to expand the effective cell range (physical page length) for simultaneously performing read / write between the cell array and the page buffer to basically realize fast read / write, compared with the NOR type, each Cell read / write speeds are slower. [0003] With effective use of such performance, NAND type flash memory has been adopted in various recording media including file memory and m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G06F12/00G06K19/07
CPCG11C16/10
Inventor 工藤靖雄助川博河本和也
Owner KK TOSHIBA