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Photosensor

A light sensor, photoelectric conversion technology, applied in photovoltaic power generation, electric solid state devices, semiconductor devices, etc., can solve the problem of impossible to ensure photosensitivity

Inactive Publication Date: 2009-08-26
CASIO COMPUTER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It will not be possible to ensure sufficient photosensitivity (ratio of photocurrent / dark current)

Method used

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Examples

Experimental program
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Effect test

no. 1 example

[0024] Figure 1-4 The structure of the first embodiment of the present invention is shown. figure 1 is a perspective plan view of the photosensor according to the first embodiment of the present invention. Figure 2A is along figure 1 The "II A -II A "A cross-sectional view taken along the line. Figure 2B is along figure 1 The "II B -II B "A cross-sectional view taken along the line.

[0025] The photosensor according to the first embodiment includes a substrate 1 made of glass or the like. Strip-shaped gate electrodes 2 made of chrome or the like and gate lines 3 connected to gate electrodes 2 are provided on the upper surface of substrate 1 .

[0026] On the upper surface of the substrate 1 is provided a gate insulating film 4 made of silicon nitride or the like, which covers the gate electrode 2 and the gate line 3 . A semiconductor thin film 5 for photoelectric conversion composed of intrinsic amorphous silicon is provided on the upper surface of the gate insul...

no. 2 example

[0046] Figure 8-11 The structure of the second embodiment of the present invention is shown. Figure 8 is a perspective plan view of a light sensor according to a second embodiment of the present invention. Figure 9A is along Figure 8 IX A -IX A Cross-sectional view taken by line. Figure 9B is along Figure 8 IX B -IX B Cross-sectional view taken by line. Figure 10 yes Figure 8 , 9A and 9B are plan views of semiconductor thin films for photoelectric conversion. Figure 11 yes Figure 8 , 9A and the plan view of the ohmic contact layer shown in 9B.

[0047] The same elements as those described above with reference to the first embodiment are denoted by the same reference numerals. Reference numerals of structural elements in the second embodiment that are different from the corresponding elements in the first embodiment are designated with "'".

[0048] According to the photosensor of the second embodiment and Figure 1 to Figure 4 The photosensor accordin...

no. 3 example

[0054] Figure 12-15 The structure of the third embodiment of the present invention is shown. Figure 12 is a perspective plan view of a light sensor according to a third embodiment of the present invention. Figure 13A is along Figure 12 XIII A -XIII A Cross-sectional view taken by line. Figure 13B is along Figure 12 XIII B -XIII B Cross-sectional view taken by line. Figure 14 yes Figure 12 , 13A and 13B are plan views of semiconductor thin films for photoelectric conversion. Figure 15 yes Figure 12 , 13A and a plan view of the ohmic contact layer shown in 13B.

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Abstract

A photosensor includes a semiconductor thin film for photoelectric conversion having a first side portion and a second side portion. A source electrode extends in the longitudinal direction of the semiconductor thin film and has a side edge portion that overlaps the first side portion of the semiconductor thin film, and a drain electrode extends in the longitudinal direction and has a side edge portion that overlaps the second side portion of the semiconductor thin film. At least one of the side edge portions of the source and drain electrodes has protruding portions which are arranged along the longitudinal direction and which overlap the semiconductor thin film, and notched portions formed between the protruding portions. An ohmic contact layer is formed between the semiconductor thin film and the protruding portions of the at least one of the side edge portions of the source and drain electrodes.

Description

technical field [0001] The present invention relates to thin film transistor light sensors. Background technique [0002] Generally, referring to a photosensor, a transistor type structure having a semiconductor thin film for photoelectric conversion formed under a gate insulating film is known. A thin film transistor structure using amorphous silicon as a photoelectric conversion semiconductor film due to the necessity of mounting a photosensor on an insulating substrate is also known. [0003] Japanese Patent Application KOKAI Publication No. 8-213584 discloses such a thin film transistor type photosensor. The photosensor disclosed in JP08-213584 has a bottom gate electrode made of a light-shielding conductive material formed under a bottom gate insulating film formed on a layer made of amorphous silicon for Below the photoelectric conversion semiconductor thin film. Furthermore, in this conventional structure, a top gate insulating film is formed on the semiconductor t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0392H01L31/113H01L29/417H01L29/786
CPCH01L27/14678H01L31/03921H01L31/1136Y02E10/50H01L31/022408H01L31/0224H01L31/113H01L29/417H01L31/0392
Inventor 松本广山口郁博小林启和
Owner CASIO COMPUTER CO LTD
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