Method and system for non-destructive distribution profiling of an element in a film

A thin film and element technology, applied in interference spectroscopy, spectrum investigation, etc., can solve the problem of not providing fast analysis of thin films

Inactive Publication Date: 2009-09-02
瑞沃瑞公司
View PDF6 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such techniques, such as those utilizing material removal during depth profiling, are effective in many settings such as R&D, product testing, etc., but these techniques do not provide the ability to quickly analyze thin films, which is necessary in production. indispensable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and system for non-destructive distribution profiling of an element in a film
  • Method and system for non-destructive distribution profiling of an element in a film
  • Method and system for non-destructive distribution profiling of an element in a film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] Example implementations have been described with reference to specific configurations and techniques. Those of ordinary skill in the art will understand various changes and modifications that may be made within the scope of the appended claims. In addition, known components, devices, components, circuits, process steps, etc. have not been listed in detail.

[0048] Embodiments of the present invention relate to a method and system for extracting depth distribution information and / or centroid values ​​of one or more elements deposited in thin films or ultrathin films. The film thickness of the thin film is less than 20nm, in most cases less than 10nm, even less than 2nm. It is contemplated that embodiments of the present invention are similarly applicable to the analysis of thin films having a thickness greater than or equal to about 20 nm. In one main aspect of the invention, the depth distribution profile of an element in a thin film is determined. First, one or mor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Description

[0001] related application [0002] This application is related to and claims the benefit of and priority to US Provisional Patent Application Serial No. 60 / 698,367, Attorney Docket No. 007029.P029Z, filed July 11, 2005, the entire contents of which are hereby incorporated by reference. technical field [0003] Embodiments of the present invention relate to a method and system for extracting depth distribution information of one or more elements deposited in a thin or ultra-thin film. Background technique [0004] Analysis of sample composition is essential in the manufacture of many different types of equipment. Sample composition is the concentration of elements and / or chemical species in the film. An example of a sample requiring component analysis is a gate oxide film formed in a semiconductor integrated circuit device. As the density of integrated circuit chips in semiconductor devices increases and the size of semiconductor devices continues to decrease, sample analy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01J3/45
Inventor P·德切科B·许勒尔D·里德M·光D·S·巴兰斯
Owner 瑞沃瑞公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap