Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes

一种等离子、前体的技术，应用在金属材料涂层工艺、电路、电气元件等方向
CN101528974AInactive Publication Date: 2009-09-09APPLIED MATERIALS INC
3 Cites 27 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
APPLIED MATERIALS INC
Publication Date
2009-09-09
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Methods of depositing a dielectric layer in a gap formed on a substrate are described. The methods include introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber. The organo-silicon precursor has a C:Si atom ratio of less than 8, and the oxygen precursor comprises atomic oxygen that is generated outside the deposition chamber. The precursors are reacted to form the dielectric layer in the gap. Methods of filling gaps with dielectric materials are also described. These methods include providing an organo-silicon precursor having a C:Si atom ratio of less than 8and an oxygen precursor, and generating a plasma from the precursors to deposit a first portion of the dielectric material in the gap. The dielectric material may be etched, and a second portion of dielectric material may be formed in the gap. The first and second portions of the dielectric material may be annealed.
Need to check novelty before this filing date? Find Prior Art

Description

[0001] Comparison of related applications

[0002] This application is related to commonly assigned U.S. Provisional Application (U.S. Provisional Patent Application No. 60 / 803493 filed May 30, 2006 by Ingle et al., entitled "CHEMICAL VAPORDEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING ASILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN"). This application also has a commonly assigned U.S. Provisional Application (Chen et al. filed May 30, 2006, U.S. Provisional Patent Application No. 60 / 803481, entitled "A NOVEL DEPOSITION-PLASMA CURECYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE"). This application also has a commonly assigned U.S. Provisional Application (U.S. Provisional Patent Application No. 60 / 803489 filed May 30, 2006 by Munro et al., entitled "A METHOD FOR DEPOSITINGAND CURING LOW-K FILMS FOR GAPFILL AND CONFORMAL FILMAPPPLICATIONS"). This application also has a commonly assigned US Provisional Application (US Provisional Patent Application No. 60 / 8...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More