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Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes

一种等离子、前体的技术，应用在金属材料涂层工艺、电路、电气元件等方向

Inactive Publication Date: 2009-09-09
APPLIED MATERIALS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these Si-O-C films have lower k values ​​than undoped and fluorine-doped silicon oxide films, they also tend to be more porous, which is an unfavorable consequence

Method used

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  • Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes
  • Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes
  • Formation of high quality dielectric films of silicon dioxide for sti: usage of different siloxane-based precursors for harp II-remote plasma enhanced deposition processes

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Embodiment Construction

[0045] This specification describes systems and methods for depositing dielectric materials in gaps and on surfaces on a substrate. The dielectric material can be formed from organosilicon compounds having a lower ratio of carbon atoms to silicon atoms (C:Si ratio) than conventional tetraethoxysiloxane (TEOS). Dielectric films formed by combining such compounds with oxygen precursors generally have lower carbon content, porosity, and WERRs than as-deposited TEOS silicon oxide. This makes the film less prone to cracking, void formation, water absorption and / or shrinkage than TEOS oxide films.

[0046] The organosilicon compound may also have an oxygen-to-silicon atom ratio (O:Si ratio) equal to or greater than that of TEOS. Organosilicon precursors with low C:Si ratios and high O:Si ratios can produce higher quality silicon oxide films with lower carbon content than conventional oxides using purely TEOS as the silicon precursor. Embodiments also include organosilicon precurso...

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Abstract

Methods of depositing a dielectric layer in a gap formed on a substrate are described. The methods include introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber. The organo-silicon precursor has a C:Si atom ratio of less than 8, and the oxygen precursor comprises atomic oxygen that is generated outside the deposition chamber. The precursors are reacted to form the dielectric layer in the gap. Methods of filling gaps with dielectric materials are also described. These methods include providing an organo-silicon precursor having a C:Si atom ratio of less than 8and an oxygen precursor, and generating a plasma from the precursors to deposit a first portion of the dielectric material in the gap. The dielectric material may be etched, and a second portion of dielectric material may be formed in the gap. The first and second portions of the dielectric material may be annealed.

Description

[0001] Comparison of related applications [0002] This application is related to commonly assigned U.S. Provisional Application (U.S. Provisional Patent Application No. 60 / 803493 filed May 30, 2006 by Ingle et al., entitled "CHEMICAL VAPORDEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE USING ASILICON CONTAINING PRECURSOR AND ATOMIC OXYGEN"). This application also has a commonly assigned U.S. Provisional Application (Chen et al. filed May 30, 2006, U.S. Provisional Patent Application No. 60 / 803481, entitled "A NOVEL DEPOSITION-PLASMA CURECYCLE PROCESS TO ENHANCE FILM QUALITY OF SILICON DIOXIDE"). This application also has a commonly assigned U.S. Provisional Application (U.S. Provisional Patent Application No. 60 / 803489 filed May 30, 2006 by Munro et al., entitled "A METHOD FOR DEPOSITINGAND CURING LOW-K FILMS FOR GAPFILL AND CONFORMAL FILMAPPPLICATIONS"). This application also has a commonly assigned US Provisional Application (US Provisional Patent Application No. 60 / 8...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40H01L21/316C23C16/04
CPCC23C16/45525Y10S438/931H01L21/02274H01L21/3122C23C16/452H01L21/022C23C16/401H01L21/0234C23C16/045H01L21/31633C23C16/45553H01L21/02348H01L21/02216H01L21/3105H01L21/31612H01L21/02164H01L21/76224H01L21/31116C23C16/18C23C16/44
Inventor A·B·玛利克J·C·姆洛S·D·耐马尼
Owner APPLIED MATERIALS INC
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