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Volatile memory elements with boosted output voltages for programmable logic device integrated circuits

A storage element and integrated circuit technology, applied in the field of volatile storage elements

Inactive Publication Date: 2009-09-09
ALTERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Programmable logic device integrated circuits containing programmable logic

Method used

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  • Volatile memory elements with boosted output voltages for programmable logic device integrated circuits
  • Volatile memory elements with boosted output voltages for programmable logic device integrated circuits
  • Volatile memory elements with boosted output voltages for programmable logic device integrated circuits

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Embodiment Construction

[0025] [0025] The present invention relates to integrated circuits including memory elements. The invention also relates to a memory element and a circuit for loading data into said memory element. The integrated circuit may be a memory chip, a digital signal processing circuit with a memory array, a microprocessor, an application specific integrated circuit with a memory array, a programmable logic device integrated circuit in which memory elements are used to configure the memory, or any other suitable integrated circuits. For clarity, the invention will be generally described in the context of programmable logic device integrated circuits and programmable logic device memory elements.

[0026] 【0026】 figure 1 An exemplary programmable logic device 10 according to the present invention is shown.

[0027] [0027] The programmable logic device 10 may have input / output circuitry 12 for driving a signal of the device 10 off and for receiving signals from other devices via inpu...

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Abstract

The present invention discloses integrated circuits that have memory elements. The memory elements produce output signals. The integrated circuits may be programmable logic device integrated circuits containing programmable logic including transistors with gates. When loaded with configuration data, the memory elements produce output signals that are applied to the gates of the transistors in the programmable logic device to customize the programmable logic. To ensure that the transistors in the programmable logic are turned on properly, the memory elements are powered with an elevated power supply level during normal device operation. During data loading operations, the power supply level for the memory elements is reduced. Reducing the memory element power supply level during loading increases the write margin for the memory elements.

Description

[0001] [0001] This application claims priority to US Patent Application Serial No. 10 / 282,858, filed November 17, 2005. technical field [0002] [0002] The present invention relates to volatile memory, and more particularly, to volatile storage elements having a boosted output voltage for use in integrated circuits such as programmable logic devices. Background technique [0003] [0003] Integrated circuits generally contain volatile memory elements. Typical volatile storage elements are based on cross-coupled inverters (latch) and are used to store data. Each storage element can store a small amount of data. [0004] [0004] Volatile storage elements are often used to store configuration data in programmable logic devices. A programmable logic device is an integrated circuit that can be customized in small batches to realize the desired logic design. In a typical approach, a PLD manufacturer pre-designs and manufactures an off-the-shelf PLD integrated circuit. Logic desig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F7/38G11C11/00G11C5/14
CPCG06F1/3225Y02B60/1228
Inventor 刘令时M·T·陈
Owner ALTERA CORP
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