Organic EL device and manufacturing method thereof
A technology of electroluminescent devices and manufacturing methods, which is applied in the directions of organic semiconductor devices, semiconductor/solid-state device manufacturing, and electric solid-state devices, and can solve problems such as lowering yield, TFT and difficulty in driving TFT, etc., to achieve improved yield, reliable link effect
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Example Embodiment
[0101] (Embodiment 1)
[0102] In the first embodiment, an organic EL device in which the switching TFT (element A) is a top-gate TFT and the driving TFT (element B) is a bottom-gate TFT will be described. In addition, the semiconductor layer in Embodiment 1 is a silicon-based semiconductor layer or a compound semiconductor layer.
[0103] Figure 5 This shows a cross-sectional view of the organic EL device of the first embodiment.
[0104] 1. Regarding the organic EL device of Embodiment 1
[0105] in Figure 5 Among them, the organic EL device 10 includes: a switching TFT 100, a driving TFT 200, and an organic EL element 300.
[0106] The switching TFT 100 is a top gate type TFT. The switching TFT 100 includes a substrate 110, a source electrode 120 and a drain electrode 121, a semiconductor layer 130, a gate insulating film 140, and a gate electrode 122.
[0107] In the top-gate switching TFT 100, the source electrode 120 and the drain electrode 121 are arranged on the substra...
Example Embodiment
[0143] (Embodiment 2)
[0144] In Embodiment 1, the organic EL device in which the semiconductor is a silicon-based semiconductor layer or a compound semiconductor layer has been described. In the second embodiment, an organic EL device in which the semiconductor layer is an organic semiconductor layer formed by a coating method will be described.
[0145] Figure 7 A cross-sectional view of the organic EL device of the second embodiment is shown.
[0146] 1. Regarding the organic EL device of Embodiment 2
[0147] In the organic EL device 20 of Embodiment 2, the constituent elements are the same as those of the organic EL device 10 of Embodiment 1, except for the semiconductor layer 131 of the switching TFT 101, the semiconductor layer 231 of the driving TFT 201, and the banks 160 and 260. The same components as those of the organic EL device 10 are denoted by the same reference numerals, and their descriptions are omitted.
[0148] The switching TFT 101 has a bank 160 on the so...
Example Embodiment
[0176] (Embodiment 3)
[0177] In Embodiment 1 and Embodiment 2, the organic EL device in which the switching TFT is of the top gate type and the driving TFT is of the bottom gate type has been described. In Embodiment 3, an organic semiconductor device in which the switching TFT is a bottom gate type TFT and the driving TFT is a top gate type TFT will be described. In addition, in this embodiment, illustration of the organic EL element is omitted, and the organic semiconductor device will be described. Furthermore, the material of the semiconductor layer in this embodiment is an organic semiconductor.
[0178] 1. Regarding the semiconductor device of the third embodiment
[0179] Picture 9 A cross-sectional view of the semiconductor device of the third embodiment is shown.
[0180] In the description of the organic semiconductor device 30 of the third embodiment, the same constituent elements as those of the organic EL device 20 are given the same reference numerals, and the de...
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