Cleaning composition for removing photoresist

Abstract

The present invention discloses a cleaning composition with low etching performance, which is characterized by comprising: a quaternary ammonium hydroxide, alkyl glycol aryl ether or derivatives thereof, and acetophenone or derivatives thereof which is represented by the following formula I, wherein R5 and R6 represent H, hydroxyl, C1-C12 alkyl or C1-C2 hydroxyalkyl, the alkyl glycol aryl ether or derivatives thereof are ethylene glycol monophenyl ether, propylene glycol monophenyl ether, iso-propylene glycol monophenyl ether, diethylene glycol monophenyl ether, dipropylene glycol monophenyl ether, di-iso-propylene glycol monophenyl ether, ethylene glycol monobenzyl ether, propylene glycol monobenzyl ether, propylene diphenyl ether, iso-propylene glycol diphenyl ether, diethylene glycol diphenyl ether, dipropylene glycol diphenyl ether, di-iso-propylene glycol diphenyl ether, ethylene glycol dibenzyl ether or propylene dibenzyl ether. The inventive cleaning composition with low etching performance can be used for removing photoresist (light resistance) and other residue on the metal, metal alloy or dielectric substrate, meanwhile has lower etching speed to the silica, metal such as copper and low k material, and has good application prospect in the micro-electronics field such as semiconductor wafer cleaning.

Description

technical field [0001] The invention relates to a low-etching photoresist cleaning agent. technical background [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. In addition, during the chemical cleaning process of the photoresist on the semiconductor wafer, the cleaning agent with a higher pH will cause corrosion of the wafer substrate. Especially in the process of using chemical cleaning agents to remove metal etching residues, metal corrosion is a common and very serious problem, which often leads to a significant decrease in wafer yield. [0003] Patent document WO04059700 discloses a kind of alkaline cleaning agent, is made up of tetramethylammoni...

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Problems solved by technology

Its high cleaning temperature can cause corrosion of semiconductor wafer substrates

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