Method for determining exposure settings and lithographic exposure apparatus
A technique of lithography, equipment, used in the field of determining exposure settings
Inactive Publication Date: 2011-08-10
ASML NETHERLANDS BV
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- Description
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- Application Information
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Problems solved by technology
This means that between the detection points, it is not possible to determine the best focus position, which thus leads to a lower overall focus control of the target area
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[0035] According to the present invention ( figure 1 ) lithography equipment includes:
[0036] - an illumination system (illuminator) IL configured to condition a radiation beam B (eg, ultraviolet (UV) radiation or deep ultraviolet (DUV) radiation);
[0037] - a support structure (eg mask table) MT configured to support the patterning device (eg mask) MA and connected to first positioning means PM configured to precisely position the patterning device according to determined parameters;
[0038] - a substrate table (e.g. a wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and associated with a second positioning device configured to precisely position the substrate according to determined parameters PW connected; and
[0039] A projection system (eg, a refractive projection lens system) PS configured to project the pattern imparted to the radiation beam B by the patterning device MA onto a target region C (eg, comprising one or more dies) of the...
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The present invention relates to a method for determining exposure settings, a lithographic exposure apparatus, a computer program and a data carrier. The method for determining the exposure setting of the target area on a substrate in a lithographic exposure process comprises the following steps: determining the position of the calibration region in a first direction in a plurality of calibrationpositions through a second direction and a third direction relatively to the position of the calibration region, and providing the standard data. The method also comprises providing the manufacturingdata: establishing a position on the substrate of the target area along the second direction and the third direction; and measuring the position of the exposure area in the first direction on at least one measuring position relatively to the position of the exposure area along the second direction and the third direction. The method further comprises comparing at least one relative measuring position with a plurality of relative calibration positions, and determining the exposure setting based on the measured position and the calibration data of the exposure region in the first direction through comparing, wherein the calibration data relates to at least one relative calibration position which is different from at least one relative measuring position.
Description
technical field [0001] The invention relates to a method for determining exposure settings, a lithographic exposure apparatus, a computer program and a data carrier. This application is a continuation of US 61 / 006,950, which is hereby incorporated by reference in its entirety. Background technique [0002] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In lithographic projection equipment commonly used in the manufacture of integrated circuits, a patterning device, alternatively called a mask or reticle, may be used to generate the circuit pattern to be formed on a single layer of the IC. The pattern can be imaged onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). Typically, the transfer of the pattern is performed by using a projection system...
Claims
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IPC IPC(8): G03F7/20
CPCG03F7/70516G03B27/32G03B27/68G03F7/20
Inventor D·W·布里R·布林克霍夫F·斯达尔斯R·弗兰肯E·J·库普
Owner ASML NETHERLANDS BV