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Photodetector and spatial information detecting device using the same

A photoelectric detector, photoelectric conversion technology, applied in the direction of electric solid devices, circuits, electrical components, etc.

Inactive Publication Date: 2009-11-04
PANASONIC ELECTRIC WORKS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Therefore, there is still much room for improvement in conventional photodetectors from the standpoint of stably obtaining a wide dynamic range and improving detection accuracy even in the presence of ambient light that fluctuates over time

Method used

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  • Photodetector and spatial information detecting device using the same
  • Photodetector and spatial information detecting device using the same
  • Photodetector and spatial information detecting device using the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0041] figure 1 A region corresponding to one pixel Px of the photodetector is shown. Such as figure 2 and image 3 As shown in , the pixel Px is provided with a substrate 10, a device formation layer 11 formed of a semiconductor material (for example, silicon) of a first conductivity type (for example, p-type) on the substrate 10, and a device formation layer 11 from the device formation layer 11. The overall surface (i.e., the upper surface) is formed at a required depth from a well 12 formed of a semiconductor material having a second conductivity type (for example, n type), formed on the overall surface of the well 12 and the overall surface of the device formation layer 11. An insulating layer 13 such as silicon oxide or silicon nitride, and electrodes provided on the insulating layer 13 . Such as image 3 As shown in , the electrodes include a sensitivity control electrode 21 , a separation electrode 22 , an accumulation electrode 23 and a barrier electrode 24 . In...

no. 2 example

[0101] The photodetector of the second embodiment is characterized in that the overflow drain region 15 (i.e., the charge removing portion) has a function of removing excess charge generated by the photoelectric conversion portion D1 when the amount of light received excessively increases, and removes the excess charge generated by the charge separating portion. Function of undesired charges separated by D2. When the excess charge is not removed, leakage of the excess charge to another pixel Px, a so-called image blooming phenomenon, may occur.

[0102] Incidentally, when the overflow drain region 15 is formed, as in the case of the first embodiment, there is a possibility that excess charges other than excess charges are lost from the photoelectric conversion portion D1 when removing undesired charges from the charge separation portion D2. charge. For example, when removing undesired charges in the period of collecting charges in the photoelectric conversion portion D1 by co...

no. 3 example

[0106] The photodetector of the third embodiment is characterized in that a pair of slit regions 32 is formed so as to straddle between the barrier electrode 24 in the well 12 and the adjacent separation electrode 22, as Figure 10 shown. In addition, the respective elongated regions 32 are spaced apart from each other in the horizontal direction Dh. That is, one of the elongated regions 32 is formed near one end of the barrier electrode 24 and the adjacent separation electrode 22, and the other elongated region 32 is formed near the opposite ends of the barrier electrode 24 and the adjacent separation electrode 22. nearby. For example, through ion implantation, each narrow region 32 is formed with a doping concentration higher than that of the n-type well 12. + conductivity type.

[0107] When the elongated region 32 is not formed, the potential gradually changes at the boundary portion of the well 12 . In other words, the boundary portion of the well 12 has a gradually r...

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PUM

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Abstract

The invention provides a photodetector capable of improving dynamic range for input signals. This photodetector includes a photoelectric converting portion, a charge separating portion, a charge accumulating portion, a barrier electrode formed the charge separating portion and the charge accumulating portion, and a barrier-height adjusting portion electrically connected to the barrier electrode. Undesired electric charges such as generated when environment light is incident on the photoelectric converting portion are removed by the charge separating portion. A potential barrier with an appropriate height is formed under the barrier electrode by applying a voltage to the barrier electrode according to an electric charge amount supplied from the charge separating portion to the barrier-height adjusting portion. Electric charges flowing from the charge separating portion into the charge accumulating portion over the potential barrier are provided as an output of the photodetector.

Description

technical field [0001] The present invention relates to a photodetector and a spatial information detection device that detects spatial information such as a distance to an object in a target space by using the photodetector. Background technique [0002] A photodetector is a device for receiving light from a target space, generating charges corresponding to the amount of received light, and taking out the charges as a received light output. In order to obtain a wide dynamic range in this device, it is proposed to remove a constant amount of charge in the charge transport channel of the CCD device as an undesired charge, and use the remaining charge other than the undesired charge as a sensor for receiving light. effective charge at the output. [0003] For example, Japanese Patent Laid-Open Publication No. 7-22436 or 7-22437 discloses a charge transfer device capable of widening the dynamic range while maintaining the linearity of voltage-charge conversion characteristics....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/148
CPCH01L27/14887H01L27/14812H01L27/146
Inventor 桥本裕介常定扶美今井宪次高田裕司
Owner PANASONIC ELECTRIC WORKS CO LTD
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