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Configurable bevel etcher

An etching machine and bevel technology, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of polluting substrates, weakening, falling on other substrates, etc.

Active Publication Date: 2011-08-03
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result of several different etching processes, as successive layers of by-products are deposited on the upper and lower surfaces of the beveled edge of the substrate, the adhesion between the by-product layer and the substrate will eventually weaken and during substrate transfer This by-product layer may peel or flake off, often falling onto other substrates and thereby contaminating other substrates

Method used

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  • Configurable bevel etcher
  • Configurable bevel etcher
  • Configurable bevel etcher

Examples

Experimental program
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Embodiment Construction

[0015] figure 1 A schematic cross-sectional view of a bevel etch chamber 100 for etching a beveled edge of a substrate 110 is shown. As shown, the chamber 100 includes a negative electrode 102 coupled to an RF power source; a stage 116 for supporting a substrate 110; an insulating material 114 surrounding the stage 116; top and bottom ring electrodes 104, 106; Reactive gas is blown through the one or more gas outlets 120 and energized as a plasma to clean the by-product layer 112 formed on the beveled edge of the substrate 110 . The etching chamber 100 may encounter some difficulties in controlling the area to be cleaned. For example, to change the size of the bottom edge partition 122, it may be necessary to change the thickness of the insulating material 114, and thus it may be necessary to change the shape and / or position of the bottom ring electrode 106. In some cases, it may be necessary to change the diameter of the entire table 116, which may result in an increase in ...

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PUM

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Abstract

A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper andlower PEZ rings, wherein the annular space encloses the bevel edge.

Description

Background technique [0001] Integrated circuits are formed from wafers or substrates on which patterned microelectronic layers are formed. During substrate processing, plasmas are often used to etch predetermined portions of thin films deposited on the substrate. Typically, etch plasma density is lower near the edge of the substrate, which can result in layers of polysilicon, nitride, metal, etc. (collectively referred to as by-product layers) on the upper and lower surfaces of the bevel edge of the substrate. accumulation on. As a result of several different etching processes, as successive layers of by-products are deposited on the upper and lower surfaces of the beveled edge of the substrate, the adhesion between the by-product layer and the substrate will eventually weaken and during substrate transfer This by-product layer may peel or flake off, often falling onto and thereby contaminating other substrates. Contents of the invention [0002] According to a preferred ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
CPCH01J37/32568H01L21/0209H01J2237/335H01J37/32366H01L21/67069H01L21/3065
Inventor 安德鲁·D·贝利三世艾伦·M·舍普格雷戈里·塞克斯顿金允尚威廉·S·肯尼迪
Owner LAM RES CORP
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